Structure body electrically connected via semiconductor material layer

ABSTRACT

The present invention discloses an image display system implemented with a spatial light modulator (SLM) having a plurality of pixel elements wherein each of the pixel elements further comprises an electrode having a structural body comprising: a first electrically conductive layer; a second electrically conductive layer; and a semiconductor layer disposed adjacently to the first electric conductive layer and second electric conductive layer and the semiconductor layer further comprises a doped conductive area for electrically connecting the first electric conductive layer and second electric conductive layer.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Continuation in Part (CIP) Application of a patentapplication Ser. No. 12/378,658 filed on Feb. 18, 2009 now U.S. Pat. No.7,760,415 and application Ser. No. 12/378,658 is a Continuation in PartApplication of another patent application Ser. No. 11/894,248 filed onAug. 18, 2007 now U.S. Pat. No. 7,835,062 by one of common Inventors ofthis Patent Application. The Non-provisional application Ser. No.11/894,248 is a Continuation in Part (CIP) Application of U.S. patentapplication Ser. No. 11/121,543 filed on May 4, 2005, now issued intoU.S. Pat. No. 7,268,932. The application Ser. No. 11/121,543 is aContinuation in part (CIP) Application of three previously filedApplications. These three Applications are Ser. Nos. 10/698,620 nowabandoned; 10/699,140, now issued into U.S. Pat. No. 6,862,127; and Ser.No. 10/699,143, now issued into U.S. Pat. No. 6,903,860. All threepatents were filed on Nov. 1, 2003 by one of the Applicants of thisPatent Application. The disclosures made in these Patent Applicationsare hereby incorporated by reference in this Patent Application.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an image display system implementedwith a mirror device manufactured as a MEMS device to function as aspatial light modulator (SLM). More particularly this invention relatesto a technique used to manufacture a mirror element includes astructural body having no border surface straddling a semiconductormaterial layer.

2. Description of the Related Art

Even though in recent years, there have been significant advances madein the technologies for implementing an electromechanical mirror deviceas a spatial light modulator (SLM), there are still limitations anddifficulties when state of the art current technologies are applied toprovide a high quality image. Specifically, when the images aredigitally controlled, the image quality is adversely affected due to thelimitation that the images are not displayed with sufficient number ofgray scales.

An electromechanical mirror device is drawing a considerable interestand commonly employed as a spatial light modulator (SLM) in the imageproject apparatuses. The electromechanical mirror device is typicallyimplemented with a “mirror array” comprising a large number of mirrorelements. In general, the number of mirror elements may range from60,000 to several millions of micromirror pieces are manufactured astwo-dimensional array on a surface of a substrate in anelectromechanical mirror device.

Referring to FIG. 1A for an image display system 1 disclosed in U.S.Pat. No. 5,214,420 that comprises a screen 2. The display system 1further includes a light source 10 to project an illumination light fordisplaying images on the screen 2. The illumination light 9 from thelight source is further focused and directed toward a lens 12 by amirror 11. Lenses 12, 13 and 14 function together as a beam culminatorto culminate light 9 into a culminated light 8. A spatial lightmodulator (SLM) 15 is controlled on the basis of data input by acomputer 19 via a bus 18 to selectively redirect portions of light froma path 7 toward an enlarger lens 5 and onto screen 2. The SLM 15 isimplemented with a mirror array comprising large number of mirror 33each includes a deflectable reflective element shown as elements 17, 27,37, and 47 depicted in FIG. 1B. Each mirror 33 is connected by a hinge30 on a surface 16 of a substrate in the electromechanical mirror deviceas shown in FIG. 1B. When the element 17 is in one position, a portionof the light from the path 7 is redirected along a path 6 to lens 5where it is enlarged or spread along the path 4 to impinge on the screen2 to display an illuminated pixel 3. When the element 17 is in anotherposition, the light is redirected away from screen 2 and hence the pixel3 is displayed as a dark pixel on the display screen 2.

The mirror device comprises a plurality of mirror elements to functionas spatial light modulator (SLM) wherein each mirror element comprises amirror and electrodes. A voltage applied to the electrode(s) generates acoulomb force between the mirror and the electrode(s) to control themirror to tilt to an inclined angle. According to a common term used inthis specification, the mirror is “deflected” to an angular position fordescribing the operational condition of a mirror element.

When a voltage applied to the electrode(s) controls the mirror todeflect to a controlled angular position, the deflected mirror alsoreflects an incident light to a controlled direction. The direction ofthe reflected light is therefore controlled in accordance with thedeflection angle of the mirror and that in turn is controlled by avoltage applied to the electrode. The present specification refers to astate of the mirror as an ON state when the mirror reflectssubstantially the entirety of an incident light a projection pathdesignated for image display and as an OFF state when the mirrorreflects the incident light to a direction away from the designatedprojection path for image display.

Specifically, FIG. 1C exemplifies a control circuit for controlling amirror element according to the disclosure in the U.S. Pat. No.5,285,407. The control circuit includes a memory cell 32. Varioustransistors are referred to as “M*” where “*” designates a transistornumber and each transistor is an insulated gate field effect transistor.Transistors M5 and M7 are p-channel transistors; while transistors M6,M8, and M9 are n-channel transistors. The capacitances C1 and C2represent the capacitive loads in the memory cell 32. The memory cell 32includes an access switch transistor M9 and a latch 32 a, which is basedon a typical Static Random Access switch Memory (SRAM) design. Thetransistor M9 connected to a Row-line receives a data signal via aBit-line. The memory cell 32 written data is accessed when thetransistor M9 which has received the ROW signal on a Word-line is turnedon. The latch 32 a consists of two cross-coupled inverters, i.e., M5/M6and M7/M8, which permit two stable states, that is, a state 1 is Node Ahigh and Node B low, and a state 2 is Node A low and Node B high.

The control circuit, as illustrated in FIG. 1C, controls the mirrors toswitch between two states, and the control circuit drives the mirror tooscillate to either the ON or OFF deflected angle (or position), asshown in FIG. 1A.

The minimum intensity of light controllable to reflect from each mirrorelement for image display, i.e., the resolution of gray scale of imagedisplay for a digitally controlled image display apparatus, isdetermined by the least length of time that the mirror is controllableto be held in the ON position. The length of time that each mirror iscontrolled to be held in the ON position is in turn controlled bymultiple bit words.

As a simple illustration, FIG. 1D shows the “binary time intervals” whencontrolling micromirrors with a four-bit word. As shown in FIG. 1D, thetime durations have relative values of 1, 2, 4, 8, which in turn definethe relative brightness for each of the four bits where “1” is the leastsignificant bit and “8” is the most significant bit. According to thecontrol mechanism as shown, the minimum controllable differences betweengray scales for showing different levels of brightness is a representedby the “least significant bit” that maintains the micromirror at an ONposition.

For example, assuming n bits of gray scales, one time frame is dividedinto 2^(n)−1 equal time periods. For a 16.7-millisecond frame period andn-bit intensity values, the time period is 16.7/(2^(n)−1) milliseconds

For controlling deflectable mirror devices, the PWM applies data to beformatted into “bit-planes”, with each bit-plane corresponding to a bitweight of the intensity of light. Thus, if the brightness of each pixelis represented by an n-bit value, each frame of data has n bit-planes.Then, each bit-plane has a 0 or 1 value for each mirror element.

When adjacent image pixels are displayed with a very coarse gray scalecaused by great differences in the intensity of light, thus, artifactsare shown between these adjacent image pixels. That leads to thedegradations of image quality. The image degradations are especiallypronounced in the bright areas of image where there are “bigger gaps”between of the gray scales of adjacent image pixels. The artifacts aregenerated by technical limitations in that the digitally controlledimage does not provide a sufficient number of the gray scale.

As the mirrors are controlled to operate in a state of either ON or OFF,the intensity of light of a displayed image is determined by the lengthof time each mirror is in the ON position. In order to increase thenumber of gray scales of a display, the switching speed of the ON andOFF positions for the mirror must be increased. Therefore the digitalcontrol signals need be increased to a higher number of bits. However,when the switching speed of the mirror deflection is increased, astronger hinge for supporting the mirror is necessary to sustain therequired number of switches between the ON and OFF positions for themirror deflection. In order to drive the mirrors with a strengthenedhinge, a higher voltage is required. The higher voltage may exceedtwenty volts and may even be as high as thirty volts. The mirrorsproduced by applying the CMOS technologies are probably not appropriatefor operating the mirror at such a high range of voltages, and thereforeDMOS mirror devices may be required. In order to achieve a higher degreeof gray scale control, more complicated production processes and largerdevice areas are required to produce the DMOS mirror. Conventionalmirror controls are therefore faced with a technical problem in thataccuracy of gray scales and range of the operable voltage have to besacrificed for the benefits of a smaller image display apparatus.

Furthermore, a mirror device is commonly produced by applying a processtypically applied to the production process of a semiconductor. Anetchant such as hydrogen fluoride or a similar etchant is used in theprocess. In the production process of a mirror device, a desiredstructure is eventually obtained by using different materials formultiple structural layers by applying different etching process usingthe aforementioned etchant. An unnecessary region or a sacrifice layeris removed. A protective layer (i.e., an etch-stop layer) is used toprotect a part manufactured as a structural layer. Therefore, in theproduction process of the mirror device is carried out by selecting thematerial of the structural layer, the material of an inter-layerinsulation film for securing the insulation between individual layersthe material of a sacrifice layer, and selecting an etchant for carryingout the manufacturing processes. There are however situations theetchant may migrate from an obscure gap between individual layers causean area originally not design for exposure to the etchant inadvertentlyinvaded by the etchant. The manufacturing processes thus cause anundesirable electrical shorting and a collapsed structural layer.

In the meantime, there are reference materials related to the presentinvention proposal.

U.S. Pat. No. 6,744,550 has disclosed a layered electrode having a step.

U.S. Pat. No. 6,552,840 has disclosed an electrode having a step or aslope surface.

U.S. Pat. No. 5,673,139 has disclosed a vertical silicon hinge.

U.S. Pat. No. 6,128,121 has disclosed a configuration in whichelectrodes are respectively placed on both sides of a vertical siliconhinge.

U.S. Pat. No. 7,068,417 has disclosed a configuration in whichelectrodes are respectively placed on both sides of a vertical siliconhinge.

U.S. Pat. No. 7,022,249 has disclosed a configuration in which a driveelectrode and a mirror abut on each other.

U.S. Pat. No. 6,735,008 has disclosed a structure in which electrodes,each of which is constituted by an insulation layer and an electricconductor, are respectively placed on both sides of a vertical hinge.

U.S. Pat. No. 5,447,600 has discloses an electrode, on which a mirrorabuts, and a drive electrode.

U.S. Pat. No. 6,914,709 has disclosed the structure of an electrode of amirror.

U.S. Pat. No. 7,079,301 has disclosed the structure of an electrode of amirror.

U.S. Pat. No. 6,912,336 has disclosed a metal-deposited electrode.

U.S. Pat. No. 6,962,419 has disclosed an electrode having differentheights depending on the deflecting direction of a mirror.

U.S. Pat. No. 7,206,110 has disclosed a configuration using a metalliclayer for shielding light.

U.S. Pat. No. 5,818,095 has disclosed a configuration using a metalliclayer for shielding light.

However, these disclosures have not yet provided an effectiveconfiguration and method to overcome the technical limitationsencountered in the conventional image display systems. Therefore, a needstill exists in the art of image display systems applying digitalcontrol of a mirror array as a spatial light modulator to provide newand improved systems such that the above-discussed difficulties can beresolved.

SUMMARY OF THE INVENTION

In consideration of the situation described above, the present inventionaims at providing a technique for protecting an electrode and a circuitfrom an etchant by using a structural body having no border surfacestraddling semiconductor material layers in a technique used for astructural body electrically connected by way of a semiconductormaterial layer.

A first embodiment of the present invention provides an image displaysystem implemented with a spatial light modulator (SLM) having aplurality of pixel elements wherein each of the pixel elements furthercomprises an electrode having a structural body comprising: a firstelectrically conductive layer; a second electrically conductive layer;and a semiconductor layer disposed adjacently to the first electricconductive layer and second electric conductive layer and thesemiconductor layer further comprises a doped conductive area forelectrically connecting the first electric conductive layer and secondelectric conductive layer.

A second embodiment of the present invention provides An image displaysystem implemented with a mirror device comprising a plurality ofmicromirrors each supported on a deflectable hinge electricallyconnected to the micromirror; a hinge electrode for applying a voltageto the hinge and the micromirror electrically connected to the hinge; adrive electrode for applying a second voltage independent of the voltageapplied to of the hinge electrode; a drive circuit for controlling thehinge electrode and the drive electrode; and a semiconductor layercomprises a doped conductive area for electrically connecting the hingeand hinge electrode, hinge electrode and drive circuit, or the driveelectrode and drive circuit.

A third embodiment of the present invention provides a mirror device,comprising: an image display system implemented with a mirror devicecomprising a plurality of micromirrors each supported on a deflectablehinge electrically connected to the micromirror; a hinge electrode forapplying a voltage to the hinge and the micromirror electricallyconnected to the hinge; a drive electrode for applying a second voltageindependent of the voltage applied to of the hinge electrode; and adrive circuit for controlling the hinge electrode and the driveelectrode; wherein an interface between the mirror and hinge, betweenthe hinge and hinge electrode, between hinge electrode and drivecircuit, and between the drive electrode and drive circuit comprisessurface-to-surface interface without a face straddling both sides of theinterface.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention is described in detail below with reference to thefollowing Figures.

FIG. 1A is a conceptual diagram showing the configuration of aprojection apparatus according to a conventional technique;

FIG. 1B is a conceptual diagram showing the configuration of a mirrorelement of a projection apparatus according to a conventional technique;

FIG. 1C is a conceptual diagram showing the configuration of the drivecircuit for a mirror element of a projection apparatus according to aconventional technique;

FIG. 1D is a conceptual diagram showing the format of image data used ina projection apparatus according to a conventional technique;

FIG. 2 is a diagonal view diagram showing a mirror device in which aplurality of mirror elements used for controlling the reflectingdirection of incident light by deflecting mirrors is arrayed in twodimensions on a device substrate;

FIG. 3A is a top view diagram of the mirror element shown in FIG. 2;

FIG. 3B is a conceptual diagram showing a cross-sectional configurationof the mirror element shown in FIG. 2;

FIG. 4A is a diagram showing the situation of a mirror element when amirror is in a state (i.e., an ON state) of reflecting an incident lightto the projection optical system of a projection apparatus;

FIG. 4B shows the volume of light projected in the ON state exemplifiedin FIG. 4A;

FIG. 4C is a diagram showing the situation of a mirror element when amirror is in a state (i.e., an OFF state) of not reflecting an incidentlight to the projection optical system of a projection apparatus;

FIG. 4D shows the volume of light projected in the OFF state exemplifiedin FIG. 4C;

FIG. 4E is a diagram showing the situation of a mirror element when amirror is in the state (i.e., an oscillation state) of a freeoscillation;

FIG. 4F shows the volume of light projected in the oscillation stateexemplified in FIG. 4E;

FIG. 5 is a functional block diagram showing an exemplary configurationof a control unit comprised in a projection apparatus;

FIG. 6 is a conceptual diagram showing how a spatial light modulator(i.e., a mirror device) is controlled by a combination between an ON/OFFcontrol and an oscillation control;

FIG. 7A is a cross-sectional diagram of a mirror element according to afirst preferred embodiment;

FIG. 7B is a top view diagram of a mirror element according to the firstembodiment;

FIG. 7C is a top view diagram of a mirror element according to the firstembodiment;

FIG. 7D is a top view diagram of a mirror element according to the firstembodiment;

FIG. 7E is a diagram showing the situation of a mirror element, in an ONstate, according to the first embodiment;

FIG. 7F is a diagram showing the situation of a mirror element, in anOFF state, according to the first embodiment;

FIG. 7G is a conceptual diagram showing an exemplary circuitconfiguration of a mirror element;

FIG. 7H is a timing chart showing an exemplary operation of the circuitconfiguration exemplified in FIG. 7G;

FIG. 8 is a diagram showing an exemplary configuration of the layout ofa control circuit placed in a pixel array in which pixel units (i.e.,mirror elements) are arrayed;

FIG. 9A is a conceptual diagram showing a cross-sectional configurationof a mirror element according to a second preferred embodiment;

FIG. 9B is a bottom view diagram of a drive electrode included in themirror element exemplified in FIG. 9A;

FIG. 10A is a diagram for describing, in further detail, of the elastichinge of a mirror element according to the second embodiment;

FIG. 10B is a diagram showing an exemplary modification of theconfiguration for connecting the mirror to the elastic hinge of themirror element according to the second embodiment;

FIG. 10C is a diagram showing another exemplary modification of theconfiguration for connecting the mirror to the elastic hinge of themirror element according to the second embodiment;

FIG. 11 is a diagram for describing the configuration of an exemplarymodification of a mirror element according to the second embodiment;

FIG. 12A is a top view diagram of a mirror element according to thesecond embodiment, with upper layers than a first protective layerremoved;

FIG. 12B is a top view diagram of a mirror element according to thesecond embodiment, with upper layers than a second protective layerremoved;

FIG. 13 is a conceptual diagram showing an exemplary circuitconfiguration of a mirror element according to the second embodiment;

FIG. 14A is a timing chart showing an exemplary function of the circuitconfiguration of a mirror element according to the second embodiment;

FIG. 14B is a timing chart showing another exemplary function of thecircuit configuration of a mirror element according to the secondembodiment;

FIG. 14C is a timing chart showing yet another exemplary function of thecircuit configuration of a mirror element according to the secondembodiment;

FIG. 14D is a timing chart showing yet another exemplary function of thecircuit configuration of a mirror element according to the secondembodiment;

FIG. 14E is a timing chart showing yet another exemplary function of thecircuit configuration of a mirror element according to the secondembodiment;

FIG. 15A is a timing chart showing yet another exemplary function of thecircuit configuration of a mirror element according to the secondembodiment;

FIG. 15B is a timing chart showing yet another exemplary function of thecircuit configuration of a mirror element according to the secondembodiment;

FIG. 15C is a timing chart showing yet another exemplary function of thecircuit configuration of a mirror element according to the secondembodiment;

FIG. 16A is a conceptual diagram showing an exemplary circuitconfiguration of an exemplary modification of a mirror element accordingto the second embodiment;

FIG. 16B is a conceptual diagram showing an exemplary circuitconfiguration of another exemplary modification of a mirror elementaccording to the second embodiment;

FIG. 17A is a conceptual diagram showing a cross-sectional configurationof a mirror element according to a third preferred embodiment;

FIG. 17B is a bottom view diagram of a drive electrode included in amirror element according to the third embodiment;

FIG. 18 is a conceptual diagram showing an exemplary circuitconfiguration of a mirror element according to the third embodiment;

FIG. 19A is a timing chart showing an exemplary function of the circuitconfiguration of a mirror element according to the third embodiment;

FIG. 19B is a timing chart showing another exemplary function of thecircuit configuration of a mirror element according to the thirdembodiment;

FIG. 20A is a conceptual diagram showing an exemplary circuitconfiguration of an exemplary modification of a mirror element accordingto the third embodiment;

FIG. 20B is a conceptual diagram showing another exemplary circuitconfiguration of another exemplary modification of a mirror elementaccording to the third embodiment;

FIG. 21 is a conceptual diagram showing a cross-sectional configurationof a mirror element according to a fourth preferred embodiment;

FIG. 22A is a top view diagram of a mirror element according to thefourth embodiment, with upper layers than a first protective layerremoved;

FIG. 22B is a top view diagram of a mirror element according to thefourth embodiment, in a state in which a hinge electrode and a lowerelectrode are added to the configuration of FIG. 22A;

FIG. 22C is a top view diagram of a mirror element according to thefourth embodiment in a state in which a second protective layer and abarrier metal layer are added onto a hinge electrode and in which aninsulation layer and an upper electrode are added onto a lowerelectrode, starting from the configuration shown in FIG. 22B;

FIG. 22D is a top view diagram of a mirror element according to thefourth embodiment, in a state in which a third protective layer is addedto the configuration of FIG. 22C;

FIG. 23A is a diagram exemplifying a state of an electric fieldgenerated by a mirror element according to the fourth embodiment;

FIG. 23B is a diagram exemplifying another state of an electric fieldgenerated by a mirror element according to the fourth embodiment;

FIG. 24A is a conceptual diagram showing a cross-sectional configurationof a mirror element according to a fifth preferred embodiment;

FIG. 24B is a top view diagram of a mirror element according to thefifth embodiment; and

FIG. 25 is a conceptual diagram showing a cross-sectional configurationof a mirror element according to a sixth preferred embodiment.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The following is a description, in detail, of the preferred embodimentsof the present invention with reference to the accompanying drawings.The first is a description of an example of a premising configuration ofa mirror device according to the present embodiment followed by adescription of each preferred embodiment.

FIG. 2 is a diagonal view diagram showing a mirror device in which aplurality of mirror elements used for controlling the reflectingdirection of incident light by deflecting mirrors is arrayed in twodimensions on a device substrate. Specifically, the mirror device is akind of a micro-electromechanical system (MEMS) device.

The mirror device 100 shown in FIG. 2 is utilized as, for example, aspatial light modulator for a projection apparatus. The mirror device100 is configured to place a plurality of mirror element each comprisingan address electrode (not shown in a drawing herein), an elastic hinge(not shown in a drawing herein) and a mirror 201 supported by theelastic hinge crosswise on a device substrate 202.

In the configuration shown in FIG. 2, the mirror elements 200 eachcomprising a square mirror 201 are arranged crosswise at constantintervals (simply noted as “arrayed” hereinafter) on the devicesubstrate 202. The mirror 201 can be controlled by applying a voltage toan address electrode placed on the device substrate 202.

Referring to FIG. 2, a deflection axis 203 around which the mirror 201is deflected is depicted in a dotted line. To the mirror 201, a lightemitted from a variable light source 110 is incident so as to beperpendicular to the deflection axis 203 or form an inclined angle.

FIG. 3A is a top view diagram of the mirror element 200 shown in FIG. 2.FIG. 3B is a conceptual diagram showing a cross-sectional configuration,on a plane indicated by III-III, of the mirror element 200 shown in FIG.2.

The mirror element 200 includes the aforementioned mirror 201, anelastic hinge 204 for supporting the mirror 201, a hinge electrode 205connected to the elastic hinge 204, two address electrodes 206 a and 206b placed so as to be opposite to the mirror 201, and a first and secondmemory cells M1 and M2 corresponding to the respective addresselectrodes 206 a and 206 b.

Each memory cell has a dynamic random access memory (DRAM) structurerespectively including gate transistors (207 a or 207 b) and capacitors(207 c or 207 d) and is commonly equipped inside of the device substrate202. An insulation layer 208 is equipped on the substrate. Therefore,the memory cell and the address electrode on the insulation layer 208are connected together by way of a Via 209 equipped in the insulationlayer 208. Likewise, the hinge electrode 205 on the insulation layer 208is connected to the ground (GND) by way of the Via 209 equipped in theinsulation layer 208.

The mirror element 200 configured as described above is controlled forthe deflecting direction of the mirror 201 by controlling each memorycell in accordance with image data signal. The mirror element 200 canmodulate and reflect incident light.

Next is a description of the basic control for the mirror 201 of themirror element 200. Specifically, “Va (1, 0)” means that a predeterminedvoltage Va is applied to the address electrode 206 b and that no voltageis applied to the address electrode 206 a in the following description.“Va (0, 1)” means that no voltage is applied to the address electrode206 b and that a voltage Va is applied to the address electrode 206 a.“Va (0, 0)” means a voltage Va is applied to neither the addresselectrode 206 a nor the address electrode 206 b. “Va (1, 1)” means avoltage Va is applied to both the address electrode 206 a and addresselectrode 206 b.

FIG. 4A is a diagram showing the situation of a mirror element 200 whena mirror 201 is in a state (i.e., an ON state) of reflecting an incidentlight to the projection optical system of a projection apparatus. In thestate of FIG. 4A, a predetermined voltage Va is applied to only theaddress electrode 206 a (i.e., Va (0, 1) by way of the memory cell M1.This operation causes the mirror 201 to be tilted from a neutral stateto become an ON state by being attracted to the address electrode 206 a.In the ON state of the mirror 201, the reflection light by way of themirror 201 is captured by the projection optical system and is projectedas a projection light. FIG. 4B shows the volume of light (also noted as“light volume” hereinafter) projected in the ON state.

FIG. 4C is a diagram showing the situation of a mirror element 200 whena mirror 201 is in a state (i.e., an OFF state) of not reflecting anincident light to the projection optical system of a projectionapparatus. In the state of FIG. 4C, a predetermined voltage Va isapplied to only the address electrode 206 b (i.e., Va (1, 0) by way ofthe memory cell M2. This operation causes the mirror 201 to be tiltedfrom a neutral state to become an OFF state by being attracted to theaddress electrode 206 b. In the OFF state of the mirror 201, thereflection light is shifted from the projection optical system andtherefore does not constitute a projection light. FIG. 4D shows thevolume of light projected in the OFF state.

FIG. 4E is a diagram showing the situation of a mirror element 200 whena mirror 201 is in a state (i.e., an oscillation state) of a freeoscillation. In the state of FIG. 4E, the voltage that was applied tothe address electrode 206 a or 206 b is removed (i.e., Va (0, 0). Thisoperation causes the mirror 201 to freely oscillate between a tiltposition (i.e., a Full ON), in which the mirror 201 abuts on the addresselectrode 206 a, and a tilt position (i.e., a Full OFF), in which themirror 201 abuts on the address electrode 206 b, by the maximumamplitude A0. When the mirror 201 is in the oscillation state, the lightvolume of an incident light reflected to an ON direction and a portionof the light volume of the incident light reflected to a directionbetween the ON direction and OFF direction are incident to theprojection optical system and are projected as the brightness of animage (i.e., a projection light). FIG. 4F shows the light volumeprojected in the oscillation state.

That is, in the ON state of the mirror 201 shown in FIG. 4A,approximately all of the flux of light (noted as “light flux”hereinafter) of the reflection light proceeds to the ON direction to becaptured by the projection optical system and is projected as theprojection light. In the OFF state of the mirror 201 shown in FIG. 4C,the reflection light proceeds to the OFF direction shifted from theprojection optical system and therefore a light to be projected as aprojection light does not exist. In the oscillation state of the mirror201 as shown in FIG. 4E, a portion of the light flux of the reflectionlight, a diffraction light and/or diffuse reflection light are capturedby the projection optical system and are projected as projection light.

Specifically, the above described FIGS. 4A, 4B, 4C, 4D, 4E and 4Fexemplify the case of applying a voltage Va, which is expressed by abinary value, i.e., 0 or 1, to the two address electrodes 206 a and 206b, respectively; the value of the voltage Va may be controlled undermultiple values. This configuration increases the steps magnitude ofcoulomb force generated between the mirror 201 and each respectiveaddress electrode, thereby enabling more minute control for the mirror201.

Furthermore, the above described FIGS. 4A, 4B, 4C, 4D, 4E and 4Fexemplify the case of setting the mirror 201 (i.e., the hinge electrode205) at the ground potential; alternatively, an offset voltage may beapplied to the mirror 201. This configuration enables more minutecontrol for the mirror 201.

Specifically, the coulomb force generated between the mirror 201 andaddress electrode 206 a or 206 b) is represented by the followingexpression:

$\begin{matrix}{{F = {k^{\prime}\frac{{eS}^{2}V^{2}}{2h^{2}}}},} & (1)\end{matrix}$

where “S” is the area size of the address electrode 206 a or 206 b, “h”is the distance between the mirror 201 and address electrode 206 a or206 b, “e” is the permittivity between the mirror 201 and addresselectrode 206 a or 206 b, “V” is a voltage applied to the addresselectrode 206 a or 206 b and “k” is a correction factor.

A mirror device as described above can be produced by a process similarto the production process of a semiconductor. The production processmainly includes chemical vapor deposition (CVD), photolithography,etching, doping and chemical mechanical polishing (CMP).

Specifically, the present specification document specifically denotes anelectrode connected to memory described above as an address electrode,and an electrode not connected to memory described later as a plateelectrode. Furthermore, when a drive electrode is not distinguished froma hinge electrode, both of them are collectively denoted as a stationaryelectrode.

Next is a description of a projection apparatus utilizing a mirrordevice as a spatial light modulator.

FIG. 5 is a functional block diagram showing an exemplary configurationof a control unit comprised in a projection apparatus. The control unit310 of the projection apparatus 300 includes frame memory 130, an SLMcontroller 140, a sequencer 160, a light source control unit 170 and alight source drive circuit 180. Specifically, the projection apparatus300 utilizes the above described mirror device 100 as a spatial lightmodulator 150.

The following is a brief description of the role of each functionalblock of the projection apparatus 300. The sequencer 160, beingconstituted by a microprocessor, et cetera, controls the operationtiming, and the like, of the entirety of the control unit 310 andspatial light modulator 150. The frame memory 130 retains input digitalvideo data 311 (e.g., a binary video signal 400), for the amount of, forexample, one frame, the data which is received from an external device(not shown in a drawing herein) that is connected to a video signalinput unit 120. The input digital video data 311 is updated moment bymoment at every time the display of one frame is completed. The SLMcontroller 140 divides input digital video data 311 that is read fromthe frame memory 130 into a plurality of subfields and outputs thedivided subfields to the spatial light modulator 150 as control data forattaining the ON/OFF control (i.e., the PWM control) and oscillationcontrol (i.e., the OSC control) for the mirror 201 of the spatial lightmodulator 150. The sequencer 160 outputs a timing signal to the spatiallight modulator 150 in synchronous with the SLM controller 140generating data.

A video image analysis unit 190 outputs a video image analysis signal312 used for generating various light source pulse patterns on the basisof the input digital video data 311 input from the video signal inputunit 120. The light source control unit 170 controls the operation ofemitting an illumination light performed at a light source 110 on thebasis of the video image analysis signal 312 obtained from the videoimage analysis unit 190 by way of the sequencer 160. The light sourcedrive circuit 180 performs the operation of driving the red laser lightsource 111, green laser light source 112 and blue laser light source 113of the variable light source 110 so as to emit light, respectively, onthe basis of an instruction from the light source control unit 170.

In the projection apparatus configured as described above, the mirrordevice is controlled with a combination of the ON/OFF control andoscillation control. Specifically, the ON/OFF control means a control inwhich a mirror is controlled under an ON state or OFF state, and theoscillation control (i.e., the OSC control) means a control in which themirror is controlled under an oscillation state or OFF state.

FIG. 6 is a conceptual diagram showing how the spatial light modulator150 (i.e., the mirror device 100) is controlled by a combination betweenthe ON/OFF control and an oscillation control. FIG. 6 exemplifies thecase of allocating a 10-bit binary video signal 400 as an input signal313 corresponding to one sub-field. A signal split unit 321 (i.e.,Signal splitter) splits the inputted binary video signal 400 into upper8 bits and lower 2 bits and outputs them to a first state control unit322 (i.e., a 1st state controller) and a second state control unit 323(i.e., 2nd state controller), respectively. The signal split unit 321further outputs a timing signal (i.e., Sync) to a timing control unit324 (i.e., a Timing controller).

The first state control unit 322 controls the mirror device 100 underthe ON/OFF control (i.e., the PWM control) on the basis of a signal thatis inputted. Meanwhile, the second state control unit 323 controls themirror device 100 under the oscillation control (i.e., the OSC control)on the basis of a signal that is inputted. The timing control unit 324controls a selection unit 325 (i.e., Selector) on the basis of a timingsignal that is input. For the mirror device 100, a state in which it iscontrolled by the first state control unit 322 and a state in which itis controlled by the second state control unit 323 are changed over bythe selection unit 325.

As described above, the mirror device is controlled, within theprojection apparatus, with a combination of the ON/OFF control andoscillation control.

Next is a description of each preferred embodiment of the presentinvention with the above described premising configuration in mind.

First Embodiment

FIG. 7A is a cross-sectional diagram of a mirror element according tothe present embodiment. In contrast to the mirror element 200exemplified in FIGS. 3A and 3B, the mirror element 700 exemplified inFIG. 7A is configured to further include two drive electrodes (i.e.,surface electrodes 721). The following is a further detail descriptionof the mirror element 700.

The wirings 702 a, 702 b, 702 c, 702 d and 702 e of a drive circuit fordriving and controlling the mirror 718, and first Vias 705 a, 705 b, 705c, 705 d and 705 e, which are connected to the aforementioned wiringsand a first insulation layer 719 are formed on the substrate 701 of themirror element 700.

Here, on the wirings 702 a, 702 b, 702 c, 702 d and 702 e, the firstVias 705 a, 705 b, 705 c, 705 d and 705 e are respectively equipped inthe first insulation layer 719.

As described above, the first insulation layer 719 is equipped with fiveVias. Specifically, the number of the Vias may be different forindividual wirings. Furthermore, the number of Vias may be larger orsmaller than five.

Furthermore, second Vias 720 a, 720 b, 720 c and surface electrodes 721a and 721 b are respectively equipped on the first Vias 705 a, 705 b,705 c, 705 d and 705 e. Then a protective layer 703 is deposited on thefirst insulation layer 719.

Specifically, the semiconductor wafer substrate 701 is preferred to be asilicon substrate. The wirings 702 a, 702 b, 702 c, 702 d and 702 e ofthe drive circuit are preferred to be aluminum wirings. The first Vias705 a, 705 b, 705 c, 705 d and 705 e and second Vias 720 a, 720 b and720 c are desired to be made of a metallic material containing tungstenor copper.

The surface electrodes 721 a and 721 b may use, for example, a material(e.g., tungsten) that is the same as, or similar to, the material of thefirst Vias 705 a, 705 b, 705 c, 705 d and 705 e and second Vias 720 a,720 b and 720 c, or a material with high electric conductivity, such asaluminum. Furthermore, the forms of the surface electrodes 721 a and 721b may be appropriately determined. Furthermore, although the surfaceelectrodes 721 a and 721 b are formed on the first Vias 705 d and 705 e,they may be formed directly on the wirings 702 d and 702 e.

The first insulation layer 719 and protective layer 703 are preferred tobe made of a material containing silicon, such as silicon carbide (SiC),amorphous silicon and silicon dioxide (SiO2). If aluminum is used forthe surface electrodes 721 a and 721 b and if amorphous silicon directlycontacts with aluminum, the aluminum-made surface electrodes 721 a and721 b will be corroded. Therefore, a silicon carbide (SiC) layer ispreferred to be provided between the amorphous silicon and thealuminum-made surface electrodes 721 a and 721 b. It is also possible toform an electrode by mixing aluminum with an impurity such as silicon,or to form a barrier layer using tantrum (Ta) or titanium (Ti) on thetop or bottom of an electrode. Such barrier layer may conceivably bestructured in two or more layers.

Specifically, a stiction phenomenon generated by the mirror 718contacting with the electrode 722 or 722 b can be prevented by equippinga stopper on the substrate 701 so as to not allow the mirror 718 to abuton the electrode 722 a or 722 b.

The mirror element 700 is equipped with the hinge electrode 704 andelectrodes 722 a and 722 b so as to secure electric conduction with thesecond Vias Via 720 a, 720 b and 720 c. The hinge electrode 704 andelectrodes 722 a and 722 b may preferably use a material with highelectrical conductivity, such as aluminum. Specifically, the hingeelectrode 704 is connected to the ground (GND).

The hinge electrode 704 is an electrode equipped for an elastic hinge711 and is configured to be the same height as that of the electrodes722 a and 722 b on the left and right sides. The forming of theindividual electrodes so that the height of the center, left and rightis the same makes it possible to form the hinge electrode 704 andelectrodes 722 a and 722 b in the same production process.

Furthermore, adjusting the height of the hinge electrode 704 atproduction makes it possible to determine the height of the center parton which the elastic hinge 711 is placed. The elastic hinge 711 is madeof, for example, amorphous silicon. The thickness of the elastic hinge711 is preferred to be a certain size between approximately 150- and 400angstroms.

Meanwhile, a plurality of elastic hinges may be provided for one mirror718, with the width of each elastic hinge reduced. For example, twoelastic hinges with a smaller width than that of the elastic hinge usedfor the case of providing one mirror 718 with a single elastic hinge maybe respectively placed on both sides of the mirror.

Furthermore, if the elastic hinge 711 is made of a silicon (Si)material, the elastic hinge 711 is preferred to have electricalconductivity through application of an In-situ doping with boron,arsenic, phosphorus or the like, or diffusing an ion-implanted materialor metallic silicide such as nickel silicide (NiSi) and titaniumsilicide (TiSi). If the elastic hinge 711 is made of silicon (Si) thatis the group IV of a semiconductor material, an additive may beappropriately selected from among the materials belonging to the groupIII or V.

Moreover, in the mirror element 700, a second insulation layer (i.e., aprotective film) 723 is deposited on the surface of the structural partof the substrate 701. The second insulation layer 723 is preferred to bea layer containing silicon such as silicon carbide (SiC) and amorphoussilicon. This layer is formed in order to prevent the hinge electrode704, surface electrodes 721 a and 721 b, and electrodes 722 a and 722 bfrom being corroded by hydrogen fluoride (HF), if they are made ofaluminum.

Furthermore, the top surface of the elastic hinge 711 may be providedwith a coupled layer. A layer made of the same material as that of theelastic hinge 711 may be equipped as the coupled layer by forming thesame area size and form as those of the mirror 718. Configuring thecoupled layer as the minimum possible area size makes it possible toprevent a deformation and/or warping of the mirror 718 due to thedifference in the coefficients of linear expansion between the mirror718 and coupled layer.

Furthermore, a joinder layer 716 is deposited on the coupled layer ofthe elastic hinge 711 for obtaining an electric connection between theelastic hinge 711 and mirror 718 while eliminating a variation in theheight among the individual mirror elements.

The joinder layer 716 is preferred to be made of, for example, singlecrystal silicon (Si), amorphous silicon or poly-silicon, to any of whichan In-Situ doping with boron, arsenic or phosphorous is applied, orion-implanted; or made of an annealed semiconductor material.Alternatively, the joinder layer 716 is preferred to possess electricalconductivity through application of diffusing a metallic silicide suchas nickel silicide (NiSi) and titanium silicide (TiSi). If the joinderlayer 716 is made of silicon (Si), which is found in the group IV amongsemiconductor materials, an additive may be appropriately selected fromamong the materials belonging to the group III or group V. Theresistance of the joinder layer 716 is approximately the same as that ofthe elastic hinge 711 or mirror 718, and is lower than the resistance ofthe protective layer 703.

If the mirror 718 is made of aluminum and if the elastic hinge 711 isconstituted by a silicon material, a barrier layer (not shown in adrawing herein) may be deposited on the top and bottom of the joinderlayer 716 so that the mirror 718 does not come to contact with theelastic hinge 711. Such a barrier layer may be constituted by two ormore layers.

Then, the mirror 718 is formed on the joinder layer 716 of the elastichinge 711 to complete the mirror element 700.

The mirror 718 is preferred to be made of a member, e.g., aluminum,which possesses a high reflectance of light (i.e., electromagneticwaves, especially visible light). Furthermore, the aluminum used for itmay be an alloy containing titanium (Ti) and/or silicon (Si). Forexample, silicon (Si) may preferably be added to aluminum by about 5%.Meanwhile, the top surface of the mirror 718 may be provided with analuminum oxide layer. Furthermore, a material with a low refractiveindex and a material with a high refractive index may alternately bedeposited onto the top surface of the mirror 718 to improve thereflectivity thereof.

Furthermore, the mirror 718 is preferred to be a square or a diamondshaped, with each side being a size between about 4- and 11 μm. Further,the gap between individual mirrors 718 is preferred to be any gapbetween about 0.15- and 0.55 μm. Further, a preferred design is suchthat the aperture ratio of an individual mirror element is no less than85%, or further preferably, no less than 90%. Specifically, theconfiguration is also such that the reflection region preferablyoccupies about 85% of the region in which the mirrors 718 are placedeven when a torsion hinge is used.

As the surface part of the substrate 701 is a perspective view of thedevice shown in FIG. 7B, the mirror 718, the electrodes 722 a and 722 band the hinge electrode 704 are enclosed by the dotted lines. Meanwhile,the deflection axis 718 a of the mirror 718 is indicated by a single-dotchain line.

As exemplified in FIG. 7B, the surface electrodes 721 a and 721 brepresent the appearance of a rectangle in the plain view, and areplaced under the opposite corners of the mirror 718. Further, thesurface electrodes 721 a and 721 b are respectively placed so as to formpoint symmetry about the center of the mirror 718. Specifically, thesurface electrode 721 may be provided by arraying a plurality ofminiature electrodes as indicated by the electrodes 721 c and 721 dwhich are shown in FIG. 7C. The individual miniature electrodes arerespectively connected to the same Via so as to be maintained at thesame electric potential (simply noted as “potential” hereinafter). Theindividual miniature electrodes can be formed by the same productionprocess as that for forming a Via, which connects between metalliclayers, in the semiconductor production process, and thus the productionof the miniature electrode is eased.

The electrodes 722 a and 722 b are placed at the positions under themirror 718 excluding positions where the surface electrodes 721 a and721 b and hinge electrode 704 are placed. Alternatively, the electrodes722 a and 722 b may be placed by overlapping with the entirety, or apart, of the surface electrodes constituted by the electrodes 721 c and721 d as exemplified in FIG. 7C. If the voltages applied to the surfaceelectrodes 721 and electrodes 722 are applied at the same time or withthe same potential, the surface electrodes 721 and electrodes 722 may beelectrically continuous to each other. In contrast, if the voltages areapplied to the surface electrodes 721 and electrodes 722 in differenttimings or with different potentials, then different drive circuits maybe connected to the respective electrodes 721 and electrodes 722 byplacing them electrically separately.

Furthermore, the electrodes 722 a and 722 b are also placed so as toform point symmetry about the center of the mirror 718 likewise the caseof the surface electrodes 721 a and 721 b.

FIG. 7D is a plain view diagram of the mirror element 700 excluding themirror 718. In FIG. 7D, the mirror 718 is depicted by a dotted line box.

As exemplified in FIGS. 7A and 7D, the electrodes 722 a and 722 b areformed to be projecting from the substrate 701. Further, the electrodes722 a and 722 b are formed so that the mirror 718 contacts with theelectrodes 722 a and 722 b, respectively, when the mirror 718 deflects,and thereby the upper limit of the deflecting angle of the mirror 718 isdetermined.

A preferred design is such that the electrodes 722 a and 722 b areformed in such a manner so as to make the deflection angle of the mirror718 anywhere between 12- and 14 degrees. Such a deflection angle of themirror 718 is preferably designed in compliance with the designs of thelight source and optical system of a projection apparatus. A preferabledesign also includes the height of the elastic hinge 711 of each mirrorelement 700 to be no larger than 2 μm and the mirror 718 of each mirrorelement 700 to be a square with each side being no larger than 10 μm.

FIG. 7E is a diagram showing the situation of the mirror element 700when the mirror 718 is in a state (i.e., an ON state) in which anincident light is reflected to the projection optical system of aprojection apparatus. In the state of FIG. 7E, a predetermined voltageVa is applied to the electrode 722 b and surface electrode 721 a, whileother electrodes are grounded by connecting them to the GND. With thisoperation, the mirror 718 is tilted by being attracted from the neutralstate to the electrode 722 b and surface electrode 721 a so that themirror 718 is controlled under the ON state.

FIG. 7F is a diagram showing the situation of the mirror element 700when the mirror 718 is in a state (i.e., an OFF state) in which theincident light is not reflected to the projection optical system. In thestate of FIG. 7F, a predetermined voltage Va is applied to the electrode722 a and surface electrode 721 b, while other electrodes are groundedby being connected to the GND. With this operation, the mirror 718 istilted by being attracted from the neutral state to the electrode 722 aand surface electrode 721 b so that the mirror 718 is controlled underthe OFF state.

In addition to the above described control, the mirror can also becontrolled under an oscillation state as exemplified in FIG. 4C in themirror element 700, as in the case of the above described mirror element200.

Specifically, the case of applying the same voltage to the electrode 721and surface electrode 722 is shown here; it is also possible to applydifferent voltage to the electrode 721 and surface electrode 722,respectively. It is further possible to carry out a control in whichmulti-step voltages are applied to the surface electrodes 721 a and 721b, and electrodes 722 a and 722 b, of the mirror element 700.

Furthermore, if the forms of the mirror 718 and elastic hinge 711 arerespectively changed, or if the elastic hinge 711 is made to possessdifferent restoring force, or if the deflection control for the mirror718 is changed, between the left side (i.e., the OFF side) and rightside (i.e., the ON side) of the mirror element 700, a voltage is appliedby changing the area size, height and/or placement (i.e., the layout) ofthe respective surface electrodes 721 a and 721 b or respectiveelectrodes, 722 a, 722 b or hinge electrode 704, between the right andleft sides of the mirror element 700, and thereby the deflection of themirror 718 is controlled.

Furthermore, at least either surface electrode 721 of the surfaceelectrode 721 a and surface electrode 721 b of the mirror element 700may be protruded from the substrate.

Next is a description of the circuit configuration of the mirror element700 with reference to FIG. 7G.

FIG. 7G is a conceptual diagram showing an exemplary circuitconfiguration of the mirror element 700. In the mirror element array ofa mirror device, the mirror elements 700 are arrayed in a grid-likefashion at each of the positions where bit lines 220 (e.g., bit lines221 and 222) vertically extended from the bit line driver (not shown ina drawing herein) and word lines 210 horizontally extended from the wordline driver (not shown in a drawing herein) cross each other.Furthermore, a plurality of plate lines (e.g., a first plate line 231and a second plate line 232) is equipped correspondingly to each wordline.

An ON capacitor 207 c is connected to the electrode 722 b on the ONside, and the ON capacitor 207 c is connected to the bit line 221 by wayof a gate transistor 207 a that is constituted by a field effecttransistor (FET) or the like.

An OFF capacitor 207 d is connected to the electrode 722 a on the OFFside, and the OFF capacitor 207 d is connected to the second bit line222 (220) by way of a gate transistor 207 b that is constituted by anFET or the like.

That is, the ON capacitor 207 c and gate transistor 207 a of the ON-sideelectrode 722 b constitute a memory cell in so-called DRAM structure.Likewise, the memory cell M2 has a DRAM structure and includes an OFFcapacitor 207 d and gate transistor 207 b of the OFF-side electrode 722a.

Furthermore, the surface electrode 721 b on the OFF side is configuredto be connected to the first plate line 231 and to be controlledseparately from the memory cell M2. Likewise, the surface electrode 721a on the ON side is configured to be connected to the second plate line232 and to be controlled separately from the memory cell M1.

The elastic hinge 711 supporting the mirror 718 is depicted as a circuitelement possessing a hinge resistor R711. If the stray capacitance ofthe elastic hinge 711 is large, it is possible to constitute a circuitalso including a capacitor (not shown in a drawing herein). One end ofthe elastic hinge 711 is connected to the ground (GND).

In this case, both the gap between the mirror 718 and ON-side electrodes(i.e., the electrode 722 b and surface electrode 721 a) and the gapbetween the mirror 718 and OFF-side electrodes (i.e., electrode 722 aand surface electrode 721 b) can be regarded as variable-capacitancecapacitors, and the deflecting operation of the mirror 718 is controlledby the difference in potentials of the variable-capacitance capacitors.That is, the individual electrodes (i.e., the electrodes 722 a and 722b, and the surface electrodes 721 a and 721 b) are drive electrodes usedfor driving the mirror 718.

The application of a voltage to the OFF-side electrode 722 a and ON-sideelectrode 722 b is controlled in accordance with the presence andabsence of data written to the respective memory cells M2 and M1, thatis, charging to, and discharging from, the corresponding respectivecapacitors. In other words, both the electrodes 722 a and 722 b areaddress electrodes.

More specifically, an arbitrary word line 210 is selected by the wordline driver, and the opening and closing of the gate transistors 207 aand gate transistors 207 b of the mirror elements 700 horizontally linedup with the selected word line 210 are controlled. Associated with thisoperation, the charging and discharging of the charge to and from the ONcapacitor 207 c and OFF capacitor 207 d, respectively, are controlled bythe bit line driver through the bit lines 221 and 222.

Meanwhile, the application of a voltage to the ON-side surface electrode721 a and OFF-side surface electrode 721 b is controlled through therespective plate lines 230 (i.e., the first plate line 231 and secondplate line 232) in lieu of causing a memory cell to intervene. That is,both the surface electrodes 721 a and 721 b are plate electrodes.

In other word, the potential of the address electrode is changedsynchronously with the selection timing of the word line, with which theelectric charge is charged to, or discharged from, the memory.Therefore, the potential of the address electrode is controlled in apredetermined interval (noted as “one time-slot” hereinafter), in whichan individual word line is selected, as a unit of control (i.e., aminimum control interval), which is the enabled minimum controlinterval. In contrast, the potential of a plate electrode can becontrolled in a shorter interval than one time-slot because there is nointervention of memory.

As such, the deflecting operation of the mirror 718 is controlled byapplying a voltage to the electrode 722 a and surface electrode 721 b onthe OFF side and the electrode 722 b and surface electrode 721 a on theON side.

Here, if the electrical resistance of the elastic hinge 711 (i.e., thehinge resistor R711) is small when a voltage is applied to theelectrodes (i.e., the surface electrode 721 b and electrode 722 a, orthe surface electrode 721 a and electrode 722 b), the electric chargegenerated in the mirror 718 flows instantly to the ground (GND). If theresistance of the elastic hinge is large, the electric charge generatedin the mirror 718 flows slowly to the ground (GND). This generates atransient characteristic in the tilting operation of the mirror 718,causing a delay in the deflecting operation of the mirror 718.

In contrast, if the resistance of the elastic hinge 711 is large and ifthere is a photoelectric effect caused by an illumination light in thestate of the mirror 718 being retained to the OFF-side electrodes (i.e.,the electrode 722 a and surface electrode 721 b) or ON-side electrodes(i.e., the electrode 722 b and surface electrode 721 a), the potentialof the mirror 718 cannot be retained at constant and therefore themirror 718 cannot be retained on the OFF side or ON side as a result ofthe difference in potentials decreasing in a passage of certain time.

Furthermore, if the resistance of the elastic hinge 711 is large and ifa voltage applied to the OFF-side or ON-side electrode is steep, thealternate current (AC) component is actually applied to the mirror 718by flowing through the variable-capacitance capacitors between themirror 718 and individual electrodes. If the potential of the electrodeis reduced from 5 volts to zero volts when the mirror 718 abuts on theelectrode on the OFF side or ON side, a voltage between −4 volts and −5volts is applied to the mirror 718. This causes the mirror 718 to bekept retained onto the electrode for a while by the applied voltage evenif the mirror 718 is tried to be released from the electrode. In orderto prevent such a state, a stopper for determining the deflecting angleof the mirror 718 is separately provided and the stopper is connected tothe ground (GND), and thereby the operation of the mirror element 700can be controlled in high speed or high reliability.

FIG. 7H is a timing chart showing an exemplary operation of the circuitconfiguration exemplified in FIG. 7G. FIG. 7H exemplifies the case ofapplying a voltage V1 alternately to the OFF-side electrode 722 a andON-side electrode 722 b for each time slot (in the pulse width t10).Specifically, when a high definition image (i.e., a full high definitiontelevision) is expressed in 10 bits, it is necessary to perform within40 microseconds (μsec) to drive the entirety of ROW lines. Therefore,the pulse width t10 is, for example, 40 [μsec].

If a voltage is not applied to the plate line 230 and if an ON-sideelectrode potential VM1, which is applied to the ON-side electrode 722 bin the state of the mirror 718 tilting onto the ON side, is changed froma voltage V1 (e.g., 10 volts) to zero volts, the potential of the mirror718 (i.e., the mirror potential V718) nears a voltage close to −V1(i.e., a peak potential V718 a), followed by gradually dropping to zerovolts because the hinge resistance R711 of the elastic hinge 711 islarge. Specifically, the peak potential V718 a is a voltage exceeding amirror-hold potential Vh (i.e., a voltage necessary to retain themirror).

Consequently, strong coulomb force is generated between the ON-sideelectrode 722 b and mirror 718 even when the ON-side electrode potentialVM1 of the ON-side electrode 722 b is changed to L (i.e., zero volts) asexemplified in the front half period 241 of a mirror displacementprofile 240. As a result, the mirror 718 is kept retained onto the ONside (for the period a) even if the OFF-side electrode potential VM2 ofthe OFF-side electrode 722 a is already at the voltage V1. Then, themirror 718 deflects so as to transition to the OFF side as the potentialof the mirror 718 decreases.

In contrast, the peak potential V718 b of the mirror potential V718 canbe suppressed to a voltage lower than the mirror-hold potential Vh bygiving a pulse potential VP2 (or a pulse potential VP1) with a pulsewidth t11 (e.g., 10 [μsec]) to the second plate line 232 (or the firstplate line 231) at a timing of the mirror 718 starting to tilt from theON state (or OFF state). As a result, the deflecting operation of themirror 718 can be so controlled as to be responsive to a change in theOFF-side electrode potential VM2 and ON-side electrode potential VM1without delay as seen in the latter half period 242 of the mirrordisplacement profile 240. In this case, the width of the ON period is insynchronous with the change in potentials of the electrodes 722 a and722 b, and therefore is the same as the pulse width t10.

Furthermore, if a pulse potential VP1 is applied to only the first plateline 231 at a timing of the mirror 718 shifting from the OFF state to ONstate, the mirror displacement profile 240 becomes a waveform thatextends the ON period for a period “a” (i.e., a mirror ON period t12(e.g., 45 μsec)). In contrast, if a pulse potential VP2 is applied toonly the second plate line 232 at a timing of the mirror 718 shiftingfrom the ON state to OFF state, the mirror displacement profile 240becomes a waveform that narrows the ON period (e.g., 35 μsec) for aperiod “a”.

As such, the application of voltage to the surface electrode 721 a andsurface electrode 721 b using the first plate line 231 and second plateline 232 enables the mirror 718 to respond quickly to a change inpotentials of the electrodes (i.e., the electrodes 722 a and 722 b).Also, generating a voltage only in one side, i.e., the first plate line231 or second plate line 232, also makes it possible to change the ONperiods of the mirror 718.

That is, controlling the potentials of the first plate line 231 andsecond plate line 232 makes it possible to change the ON/OFF operationsof the mirror 718 variously in a shorter interval than one time-slot,thereby attaining a high level of gradation.

FIG. 8 shows an exemplary configuration of the layout of a controlcircuit placed in a pixel array in which pixel units (i.e., mirrorelements 700) are arrayed. As exemplified in FIG. 8, a bit line driverunit 101, a word line driver unit 102 and a plate line driver unit 103are placed on the circumference of the pixel array.

The word line driver unit 102 comprises a word line address decoder 102a and a word line driver 102 b, which are used for selecting a word line210 (WL). Furthermore, the plate line driver unit 103 comprises a plateline driver 103 b and a plate line address decoder 103 a, which are usedfor selecting a plate line 230 (PL).

Each pixel unit is connected to the bit line 221 and bit line 222 of thebit line driver unit 101 (Bitline driver). Data from the bit lines 220(i.e., bit lines 221 and 222) is written to the pixel units belonging toa ROW line selected through the word line 210 (WL).

The word line 210 (WL) is selected when external serial data of WL_ADDRis converted into parallel data at the word line address decoder 102 a(WL Address Decoder) and the parallelized data is converted into anecessary voltage at the word line driver 102 b.

Furthermore, the plate electrodes (i.e., the surface electrodes 721 aand 721 b) are controlled separately from the word line 210 (WL) throughthe plate line 230 (PL). The plate line 230 (PL) is selected whenexternal serial data of PL_ADDR is converted into parallel data at theplate line address decoder 103 a (PL Address Decoder) and theparallelized data is converted into a necessary voltage at the plateline driver 103 b (PL Driver).

Here, the number of ROW lines comprising a plurality of pixel unitslined up in horizontal one row can be configured to be, for example, 720lines at the minimum. In this case, a data signal inputted to the memorycells M1 and M2 from each of the bit lines 221 and 222 is transmitted toone line of memory at the speed of no higher than 23 nanoseconds(“nsec”).

That is, in order to process 720 ROW lines, with 256 gray scale stepsfor each color, by dividing a display period into four parts allocatedto four colors, i.e., red (R), green (G), blue (B) and white (W), at therate of 60 frames per second, the speed is:1/60 [sec]/4 [division]/256 [steps of gray scale]/720 [lines]=22.6[nsec]

Furthermore, in order to process 1080 ROW lines, with 256 gray scalesteps for each color, by dividing a display period into three partsallocated to three colors, i.e., red (R), green (G) and blue (B), at therate of 60 frames per second, the speed is:1/60/3/256/1080=20 [nsec]

Second Embodiment

The following is a description of a mirror element according to thepresent embodiment. FIG. 9A is a conceptual diagram showing across-sectional configuration of a mirror element according to thepresent embodiment. FIG. 9B is a bottom view diagram of a driveelectrode included in the mirror element exemplified in FIG. 9A.

Incidentally, the mirror element 700 according to the first embodimentexemplified in FIG. 7A comprises a plate electrode (i.e., an electrodenot connected to memory), in addition to comprising an address electrode(i.e., an electrode connected to memory), thereby making it possible tovariously change the ON/OFF operation of the mirror and attain a highlevel of gradation as a result.

The mirror element 800 according to the present embodiment exemplifiedin FIGS. 9A and 9B is similar to the mirror element 700 shown in FIG. 7Ain terms of comprising the address electrode and plate electrode,whereas the mirror element 800 is different from the mirror element 700where the former is configured to place the address electrode and plateelectrode in layer, with an insulation layer (i.e., a dielectric bodylayer) intervening between them.

The layering of the address electrode and plate electrode makes itpossible to increase the size of them, enabling an effective use of theregion under a mirror. Associated with the increased size of theelectrodes, the coulomb force generated between the electrode and mirroralso increases, enabling a reduction in the drive voltage and autilization of a hinge with larger restoration force. Furthermore, highefficient generation of coulomb force relative to the mirror size isenabled and therefore the configuration is effective to aminiaturization of the mirror element, leading to attaining aminiaturization of the mirror device.

The following is a description of the mirror element 800, in detail,with reference to FIGS. 9A and 9B. The first is a description of theconfiguration of the mirror element 800.

The mirror element 800 is configured to include a substrate 801, amirror 802 (i.e., a movable electrode) placed oppositely to thesubstrate 801, an elastic hinge 803 for supporting the mirror 802 so asto be deflectable, a hinge electrode 804 (i.e., a stationary electrode)electrically connected to the mirror 802 and a drive electrode 808(i.e., a stationary electrode) for driving the mirror 802.

The drive electrode 808 is configured to comprise a plurality of regions(i.e., parts) and to layer a lower electrode 805 (i.e., a firstelectrode) (i.e., a substrate-side electrode unit) and an upperelectrode 806 (i.e., a second electrode) (i.e., a mirror-side electrode)together, with an insulation layer 807 (Insulator) (i.e., a dielectricbody layer) intervening between the aforementioned two electrode layers.In specific, the lower electrode 805 is formed on a part of the bottomsurface of the drive electrode 808, and the upper electrode 806 is soplaced as to cover the lower electrode 805, with the insulation layer807 intervening between them, as exemplified in FIGS. 9A and 9B.

In a drive electrode including a plurality of electrodes layered asdescribed above, a mirror is controlled by means of an electric fieldgenerated by an interaction of individual electrodes. That is, a lowerelectrode (i.e., a first electrode) actually causes coulomb force to acton the mirror by way of an upper electrode (i.e., a second electrode).

Specifically, FIGS. 9A and 9B exemplify the configuration of only oneside of the elastic hinge 803 of the configuration of the mirror element800 in which a single drive electrode exemplified in FIG. 3B is includedon the other side of the elastic hinge 803. Specifically, the other sidemay also be configured to include the layered drive electrode that isexemplified in FIGS. 9A and 9B. Meanwhile, the gap between the hingeelectrode 804 and drive electrode 808 is desired to be no more than 0.2μm.

The substrate 801 is equipped with a drive circuit including, forexample, word lines 210, bit lines 220, plate lines 230, a ground (GND),memory and wirings, for driving the mirror 802. The substrate 801 isdesired to be a silicon substrate.

A first protective layer 809 is formed on the substrate 801, and therespective electrodes (i.e., the hinge electrode 804, lower electrode805 and upper electrode 806) are placed on the first protective layer809. Furthermore, a second protective layer 810 is formed on thesurfaces of the hinge electrode 804 and drive electrode 808. Thematerial of the first protective layer 809 and second protective layer810 is desired to be silicon or silicon carbide (SiC).

The drive circuit and each electrode is electrically connected by way ofa Via equipped in the first protective layer 809. In specific, the hingeelectrode 804 is connected to the wiring 804 b of the drive circuit byway of the Via 804 a. Meanwhile, the lower electrode 805 and upperelectrode 806 are respectively connected to the wiring 805 b and wiring806 b by way of Via 805 a and Via 806 a, respectively. That is, theindividual electrodes are connected to respectively different drivecircuits. Specifically, each electrode and Via are desired to use amaterial with high electric conductivity, for example, aluminum,tungsten, titanium, copper, or a silicon (Si) material possessingelectrical conductivity. Furthermore, the individual electrodes and Viasmay be made of respectively different materials.

The individual electrodes are respectively different wirings. The wiring804 b is connected to the GND of the drive circuit. Therefore, thepotential of the hinge electrode 804 is maintained at the GND potential.The wiring 805 b is connected to memory M1 constituted by gatetransistor 207 a and capacitor 207 c. That is, the lower electrode 805is an address electrode connected to the drive circuit including thememory, and the potential of the lower electrode 805 is controlled inaccordance with the presence and absence of data written to the memoryM1 through the word line 210 and bit line 220 (i.e., the first bit line221), that is, controlled by charging and discharging of electric chargeto and from the capacitor 207 c. Meanwhile, the wiring 806 b isconnected to the plate line 230. That is, the upper electrode 806 is aplate electrode so that the potential of the upper electrode 806 iscontrolled independently of the memory M1.

Note that although the case of forming the lower electrode 805 on thefirst protective layer 809 is exemplified here, the lower electrode 805may alternatively be formed in the first protective layer 809. That is,the Via 805 is eliminated, and the lower electrode 805 is formed in thefirst protective layer 809 (i.e., the Via layer) so as to connect thelower electrode 805 directly to the wiring 805 b (i.e., the wiringlayer). In such a configuration, the lower electrode 805 can be formedin the same production process as the Via, and the production process issimplified, if the lower electrode 805 and each Via are made of the samematerial (e.g., tungsten, aluminum).

The elastic hinge 803 is placed on the hinge electrode 804, and themirror 802 is placed on the elastic hinge 803. The mirror 802 iselectrically connected to the hinge electrode 804 by way of the elastichinge 803, and therefore the potential of the mirror 802 is maintainedat the same potential as that of the hinge electrode 804, that is, atthe GND potential. As a result, the mirror 802 is controlled for thedeflecting direction in accordance with the difference in potentialsbetween the mirror 802 and the drive electrode 808 to which a voltage isapplied. The mirror 802 is made of aluminum or a material obtained byadding about 5% of silicon (Si) to aluminum.

Incidentally, in order to attain a high speed deflecting operation ofthe mirror 802, the mirror 802 needs to be securely connected to the GNDand also the electric resistance of the elastic hinge needs to besubstantially low. That is, the elastic hinge is configured to secure asufficient level of electric conductivity between the mirror 802 andhinge electrode 804 so as to attain a high speed operation of the mirror802 and support it so as to be deflectable.

Such elastic hinge 803 is formed by depositing amorphous silicon bymeans of, for example, a chemical vapor deposition (CVD) method.Furthermore, for securing electrical conductivity, it is desirable touse, when a material such as amorphous silicon is deposited, an annealedmaterial by applying an In-Situ doping with the group III atom and groupV atom, such as boron, arsenic, phosphorus, et cetera, or a material inwhich a metallic silicide, such as nickel silicide (NiSi) and titaniumsilicide (TiSi), is diffused. Specifically, the electric conductivity isfurther improved if a doping process is applied with two kinds ofmaterials, that is, boron and phosphorus. Likewise, in order to secureelectric conductivity, the elastic hinge 803 is formed in the regionwhere a part of the second protective layer 810 is removed by applyingetching.

The electrical resistance of the elastic hinge 803 is desired to be nohigher than 1 giga-ohms, whereas the resistance value will be higher bytwo to three digits if the material of the elastic hinge 803 isamorphous silicon and the above described doping process is not applied.Such a high resistance causes the mirror 802 to be electrically floatedso that even if a high voltage is applied to the drive electrode 808,the difference in potentials between the mirror 802 and drive electrode808 will not be generated. Even if a higher voltage is applied to theelectrode to generate a certain level of difference in potentials, along period of time is needed until a desired difference in potentialsis generated, making it impossible to attain a high speed operation.Furthermore, if an illumination light is irradiated on the elastic hinge803, an influence of photo-electric effect causes a current to flow inthe mirror 802 through the elastic hinge 803. Consequently, in the stateof the mirror 802 deflecting in the direction of the drive electrode 808and being retained there, the difference in potentials graduallydecreases, thus unable to retain the mirror 802. If the elastic hinge ismade of aluminum or the like, the electrical resistance is very small.However, such an elastic hinge 803 is faced with deterioration due tometallic fatigue and the like, making it inferior in durability.Therefore, the use of a material with good mechanical strength such assilicon (Si) by lowering the electrical resistance gives substantialsuperiority to a display device in need of a high speed operation overan extended time period.

The configuration as described above secures the electrical conductivitybetween the mirror 802 and hinge electrode 804 by way of the elastichinge 803. Incidentally, if the elastic hinge 803 is made ofelectrically conductive silicon and if the mirror 802 and hingeelectrode 804 are made of aluminum, there is a known problem calledmigration occurring when silicon and aluminum directly contact with eachother to allow a current to flow. The phenomenon of the migration is aproblem degrading the reliability of an electric connection and thusneeding to be avoided. Accordingly the present embodiment is configuredto form a barrier metal layer 811 between the elastic hinge 803 andhinge electrode 804, and form a barrier metal layer 812 between theelastic hinge 803 and mirror 802, thereby preventing a migrationphenomenon. Specifically, the barrier metal layers 811 and 812 use, forexample, titanium or the like.

FIG. 10A is a diagram for describing, in further detail, of the elastichinge 803 of the mirror element 800 according to the present embodiment.As exemplified in FIG. 10A, the elastic hinge 803 is approximatelyperpendicularly placed on the barrier metal layer 811 that is providedbetween the elastic hinge 803 per se and hinge electrode 804. Morespecifically, a side surface 803 a of the elastic hinge 803 is formed inan angle less than 90 degrees relative to the barrier metal layer 811.That is, the width (i.e., the left/right direction of FIG. 10A) of theelastic hinge 803 is the maximum width “h” at the part contacting withthe mirror 802, with the width gradually decreasing toward the hingeelectrode 804. This is a form attributable to the production method,that is, such a form is due to forming the elastic hinge 803 by means ofan etching process.

Furthermore, the elastic hinge 803 and mirror 802 are connected togetherby the structure of the tip of the elastic hinge 803 piercing into themirror 802. The structure of the connecting part is formed by depositingthe barrier metal layer 812 and mirror 802 on the elastic hinge 803,making the production easy. Specifically, the length “d” of the part ofthe elastic hinge 803 piercing into the mirror 802 is configured to beless than half of the thickness t (i.e., <t/2) of the mirror 802. Thisconfiguration makes it possible to suppress, to the minimum, aninfluence of the aforementioned structure on the flatness of thereflecting surface of the mirror 802.

Specifically, the barrier metal layer 811 is formed only on the hingeelectrode 804 in FIG. 10A, the barrier metal layer 811, however, may beformed by extending to the top surface of the second protective layer810 as exemplified in FIG. 9A. Further in FIG. 10A, a barrier metallayer 813 is formed also between the hinge electrode 804 and Via 804 a.The barrier metal layer 813 is provided for preventing a migrationphenomenon occurring between the hinge electrode 804 and firstprotective layer 809. As such, a migration phenomenon tends to occur onthe border between silicon and aluminum, the border existing nearby aVia that is the path of an electric current flowing toward the GND, andtherefore a barrier metal layer may be formed for protection.

Specifically, a migration phenomenon occurring between the firstprotective layer 809 and hinge electrode 804, and between the secondprotective layer 810 and hinge electrode 804, may be prevented by usingsilicon carbide (SiC) for the first protective layer 809 and secondprotective layer 810, or by forming the hinge electrode 804 using amaterial obtained by mixing aluminum with silicon (Si).

FIGS. 10B and 10C is a diagram showing the exemplary modifications ofthe configuration for connecting the mirror 802 to the elastic hinge803. FIG. 10B shows an exemplary configuration of connecting them bypiercing the mirror 802 with only a barrier metal layer 812 that isformed on the elastic hinge 803. Meanwhile, FIG. 10C shows an exemplaryconfiguration of piercing the mirror 802 directly with the elastic hinge803 in lieu of going through a barrier metal layer 812. Theconfiguration exemplified in FIG. 10C can be used if the combination ofthe materials between the mirror 802 and elastic hinge 803 makes itdifficult to allow a migration phenomenon to occur, or if the mirror 802is made of a material produced by mixing aluminum with silicon (Si).

As such, the forming of a barrier metal layer makes it possible toprevent a migration phenomenon occurring between silicon and aluminumwhile securely connecting the mirror 802 to the GND.

In the meantime, a sacrifice layer between the mirror 802 and eachelectrode is made of, for example, silicon dioxide (SiO2), and hydrogenfluoride and the like is used as etchant to remove a sacrifice layer, inthe production of the mirror element 800.

The first protective layer 809 and second protective layer 810 protectthe electrode and drive circuit, which are formed with aluminum or thelike, from the etchant, in addition to functioning as insulation layerfor preventing a shorting. The respective parts of the first protectivelayer 809 and second protective layer 810 are removed by etching andelectric conductive members (e.g., Vias and barrier metals) are embeddedin the aforementioned layers in order to secure electric connectionstraddling the layers.

In such a structure, a border surface straddling protective layers isactually formed between the protective layers (i.e., first protectivelayer 809 and second protective layer 810) and electric conductivemembers. Consequently, there is a possibility of failure occurring inthe electrode and drive circuit resulting from etchant invading into theinside from the border surface.

Accordingly, the following is a description of a method for securingsufficient electrical conductivity in a part of the protective layerwithout needing to form a border surface straddling protective layers bymeans of etching, et cetera.

FIG. 11 is a diagram for describing the configuration of an exemplarymodification of a mirror element according to the present embodiment.The mirror element 820 according to the present exemplary modificationis configured to apply a doping process to a part of a protective layer(i.e., a semiconductor material layer) with an electric conductiveimpurity, thereby causing a part of the protective layer to possesselectrical conductivity.

The following is a description of the configuration of the mirrorelement 820 according to the present exemplary modification withreference to FIG. 11. The mirror element 820 exemplified in FIG. 11differs from the mirror element 800 exemplified in FIG. 10A in thefollowing two aspects.

The first aspect is the structure of the part connecting the elastichinge 803 (i.e., the first conductive layer) to the hinge electrode 804(i.e., the second conductive layer). In the mirror element 800 of FIG.10A, a part of the second protective layer 810 (i.e., the semiconductormaterial layer) on the hinge electrode 804 is etched. Then, the elastichinge 803 and hinge electrode 804 are connected together by way of thebarrier metal layer 811 that is formed in the etched region. Incontrast, the second protective layer 810 (i.e., the semiconductormaterial layer) on the hinge electrode 804 is not etched for the mirrorelement 820 exemplified in FIG. 11. Instead, the entirety of the topsurface of the hinge electrode 804 is formed as a doping region 815 bymeans of a later described method, and the elastic hinge 803 and hingeelectrode 804 are electrically connected together by way of the dopingregion 815.

The second aspect is the structure of the part connecting the hingeelectrode 804 (i.e., the first conductive layer) and Via 804 a (i.e.,the second conductive layer). In the mirror element 800 shown in FIG.10A, a part of the first protective layer 809 (i.e., the semiconductormaterial layer) is etched. Then, the hinge electrode 804 and Via 804 aare connected together by way of the barrier metal layer 811 that isformed in the etched region. In contrast, in the mirror element 820exemplified in FIG. 11, the first protective layer 809 (i.e., thesemiconductor material layer) is not etched. Instead, the entirety ofthe part between the hinge electrode 804 (i.e., the first conductivelayer) and Via 804 a (i.e., the second conductive layer), of the firstprotective layer 809, is formed as a doping region 814, and the hingeelectrode 804 and Via 804 a are electrically connected together by wayof the doping region 814.

The other configurations are common between the mirror element 800 andmirror element 820. Therefore, a description of the mirror element 820for the part common with the mirror element 800 is not provided here.Note that FIG. 11 exemplifies only the vicinity of the hinge electrode804, of the mirror element 820.

Such doping regions (i.e., the doping region 814 and doping region 815)having electrical conductivity are formed in the following process.

First, a semiconductor material layer constituted by silicon (Si) orsilicon carbide (SiC) is forms as a protective layer by means of amethod similar to the case of FIG. 10A (process of forming protectivelayer).

Next, the electric conductive impurity are ion-injected, with energy oftens [keV] to hundreds [keV], to a region of the semiconductor materiallayer requiring conductivity. In this event, the doping region (that isthe region to which the electric conductive impurity are ion-injected)is determined to be the same size as, or larger than, a region where thefirst conductive layer contacts with the doping region and also the samesize as, or larger than, a region where the second conductive layercontacts with the doping region as exemplified in FIG. 11. The reason isthere is a possibility that an electrical characteristic may be unstableat the border between the doping region and not-doped region of thesemiconductor material layer (i.e., the protective layer). The formingof a doping region rather widely makes it possible to secure a stableelectrical connection between the first conductive layer and secondconductive layer. Furthermore, if a wider doping region is taken, a maskwhich is used for ion-injecting the electric conductive impurity into adesired region can be made easily. Note that the electric conductiveimpurity for doping may use either a P-type group III atom (e.g., boronand aluminum) or an N-type group V atom (e.g., arsenic, phosphorus andantimony) (doping process).

Then, the electric conductive impurity are activated by applying anannealing process at a temperature (e.g., in the range of 400 and 450degrees C.) that does not melt aluminum that is used for electrodes andwirings (annealing process). Specifically, it is desirable to form,using a material containing aluminum, at least either of conductivelayers that are adjacent to the semiconductor material layer, and applythe annealing process under the gaseous environment containing hydrogen.This process alloys silicon in the semiconductor material layer withaluminum in the conductive layer, thereby obtaining a good ohmicproperty. Further, the process terminates the unattached hands betweenSi and SiO2 with H2, thereby stabilizing the interfacial property.

The above described processes form a doping region having electricalconductivity with the resistance value no larger than ones giga-ohms onthe semiconductor material layer (i.e., the protective layer). Asdescribed already, the resistance value between the mirror 802 (i.e.,the movable body) and drive circuit (i.e., the wiring 804 b) is desiredto be no higher than 1 giga-ohms in order to attain a high speedoperation of the mirror 802. Therefore, the resistance value of thedoping region is also desired to be no higher than 1 giga-ohms.

The distribution of impurity atoms within a doping region is determinedby conditions such as the mass of injected ion, the injection energy andthe temperature of heat treatment. Therefore, the density of theelectric conductive impurity in the doping region is set at no lowerthan 10¹⁶/cm³, and thereby the resistance value can be decreased to nohigher than 1 giga-ohms. Meanwhile, if the resistance value cannot bereduced to a sufficient level due to a temperature limitation of a heattreatment, a plurality of doping regions is provided and connectedtogether, and thereby the combined resistance value is reduced to nohigher than 1 giga-ohms. Further, if the resistance value between themirror 802 and wiring 804 a cannot be reduced to a sufficient level dueto a limitation in the size of a Via 804 a adjacent to the dopingregion, a combined resistance value may be reduced by providing aplurality of doping regions.

FIGS. 12A and 12B are top view diagram of a mirror element 820 accordingto the present exemplary modification. FIG. 12A shows the state withupper layers than the first protective layer 809 removed. FIG. 12B showsthe state with upper layers than the second protective layer 810removed. Note that FIG. 12A indicates the forms of the mirror 802 andindividual electrodes with dotted lines. FIG. 12B indicates the form ofthe mirror 802 with dotted lines.

The utilization of the method for securing an electric connectionbetween the electric conductive layers adjacent to the above describedsemiconductor material layer by applying a doping process to a part ofthe semiconductor material layer with the electric conductive impurityis not limited to utilizing for the protective layers between theelastic hinge 803, hinge electrode 804 and Via 804 a. The method canalso be similarly utilized for the protective layer (i.e., thesemiconductor material layer) between the drive electrodes (i.e., thedrive electrode 808 and drive electrode 816) and Via. In the meantime,although the elastic hinge 803 and mirror 802 (i.e., the movable body)are connected together with the barrier metal layer 812 interveningbetween them, the barrier metal layer 812 may be eliminated by applyingthe above described method.

That is, between the mirror 802 and elastic hinge 803, between theelastic hinge 803 and hinge electrode 804, between the hinge electrode804 and the drive circuit, and between the drive electrode and the drivecircuit, can respectively be electrically interconnected with asemiconductor material layer intervening there-in-between, withoutforming a border surface straddling the semiconductor material layer.

FIG. 12A exemplifies the cases of forming: one spot of a circular dopingregion 814 a in the region of the first protective layer 809, where thehinge electrode 804 is adjacent to; three spots of circular dopingregions 814 b in the region of the first protective layer 809, where thedrive electrode 808 is adjacent to; and one spot of a rectangular dopingregion 814 c in the region of the first protective layer 809, where thedrive electrode 816 is adjacent to. If a plurality of electrodes islayered, such as the drive electrode 808, an alternative configurationmay be such that one doping region 814 b, of a plurality of dopingregions, is connected to the lower electrode 805, with the remainingdoping regions connected to the upper electrode 806. As another option,the number of doping regions to be formed may be different between thedrive electrodes on the left and right sides (i.e., the drive electrodes808 and 816). Incidentally, Vias (not shown in a drawing herein) areformed under the respective doping regions 814. FIG. 12B exemplifies thecase of forming a doping region 815 in the region of the secondprotective layer 810, where the hinge electrode 804 is adjacent to.

Specifically, in FIGS. 12A and 12B, the rectangular hinge electrode 804is so placed as to align the diagonal line of the hinge electrode 804with the deflection axis of the mirror 802. That is, the hinge electrode804 shown in FIGS. 12A and 12B is placed with 45 degrees rotatedrelatively to the hinge electrode 804 exemplified in FIGS. 7B through7D. The placing of the hinge electrode 804 as described above makes itpossible to form a larger size of the drive electrodes (i.e., the driveelectrodes 808 and 816).

As described above, the applying of the doping to a part of thesemiconductor material layer that is formed between two electricconductive layers (i.e., the first conductive layer and secondconductive layer) with the electric conductive impurity makes itpossible to electrically connect two conductive layers together withouta need to form a border surface straddling the semiconductor materiallayer. That is, the first conductive layer and second conductive layerof a structural body constituted by the first conductive layer, secondconductive layer and semiconductor material layer are electricallyconnected together by the doping region, and thereby the structural bodycomes to possess electrical conductivity as a whole. As a result, thefirst conductive layer and second conductive layer are controlled underthe same electric potential.

As such, maintaining the semiconductor material layer as a seamlessstructure, while securing the electric conductivity, makes it possibleto prevent an invasion of etchant by way of the above described bordersurface and prevent a failure associated with the invasion.

Next is a description of the circuit configuration of the mirror element800 according to the present embodiment. Note that the circuitconfiguration described below can also be used as that of the mirrorelement 820 that is an exemplary modification of the mirror element 800.

FIG. 13 is a conceptual diagram showing an exemplary circuitconfiguration of a mirror element 800 according to the presentembodiment.

The mirror element 800 according to the present embodiment has anelectrode structure that only the ON-side drive electrode 808 islayered.

Of the ON-side drive electrode 808, an ON capacitor 207 c is connectedto the lower electrode 805 (i.e., a first electrode), and the ONcapacitor 207 c is connected to a bit line 221 by way of a gatetransistor 207 a constituted by a field effect transistor (FET) and thelike. That is, the ON-side lower electrode 805 is configured as anaddress electrode connected to a memory cell M1 (i.e., a first drivecircuit) that is constituted by the ON capacitor 207 c and gatetransistor 207 a. Meanwhile, of the ON-side drive electrode 808, anupper electrode 806 (i.e., a second electrode) is configured to beconnected to the plate line 230 (i.e., a second drive circuit) andcontrolled independently of the memory cell M1. That is, the ON-sideupper electrode 806 is configured as a plate electrode.

An OFF capacitor 207 d is connected to the OFF-side drive electrode 816,and the OFF capacitor 207 d is connected to a second bit line 222 (220)by way of a gate transistor 207 b constituted by an FET and the like.That is, the OFF-side drive electrode 816 is configured as an addresselectrode connected to a memory cell M2 that is constituted by the OFFcapacitor 207 d and gate transistor 207 b.

Note that, in a plurality of mirror elements 800, the lower electrodes805 are connected to individually different memory cells M1 and memorycells M2. In contrast, the upper electrode 806 is connected to a plateline 230 that is commonly provided for a plurality of mirror elements800 lined up with the same ROW lines.

The following is a description of the operation of the circuitconfiguration exemplified in FIG. 13. As described for the firstembodiment, a use of a plate electrode in addition to using the addresselectrode makes it possible to attain an ON/OFF control and anoscillation control in a shorter interval than one time-slot (i.e., theminimum interval in which the potentials of an address electrodechange). The control performed in a shorter interval than one time-slotusing the plate electrode can also be implemented for a mirror element800 including a drive electrode in which an address electrode and aplate electrode are layered as exemplified in FIG. 13.

Incidentally, the potential at which each electrode can be positioned(that is, voltages that can be applied; noted as “possible potential”hereinafter) are as follows. The possible potential for the addresselectrodes (i.e., the lower electrode 805 and drive electrode 816) iseither of the potentials (i.e., a predetermined potential) of H leveland L level. The possible potential for the plate electrode (i.e., theupper electrode 806) is, in addition to the potential of H level or Llevel (i.e., a predetermined potential), high impedance Hiz (i.e.,floating). “L level” means a potential not generating coulomb forcebetween the electrode and mirror 802, creating a state of, for example,the same potential as that of the mirror (e.g., 0 volts and GNDpotential). “High impedance Hiz (i.e., floating)” is a third state ofpotential, neither H level nor L level, that is, a state of an electrodeelectrically floating.

In the mirror element 800 in which the upper electrode 806 is a plateelectrode, an address electrode that is the lower electrode 805 (i.e.,the first electrode) causes the mirror 802, by way of the plateelectrode (i.e., the upper electrode 806) (i.e., the second electrode),to function with coulomb force. Therefore, controlling the potential ofthe plate electrode (i.e., the upper electrode 806) makes it possible tochange over between a state in which a electric field generated in theaddress electrode (i.e., the lower electrode 805) is shut off by theplate electrode (i.e., the upper electrode 806) and a state in which theaforementioned electric field is transmitted to the mirror 802. Inspecific, setting the potential of the upper electrode 806 at L levelshuts off the electric field generated at the lower electrode 805. Thatis, a change defined as shutting off an electric field occurs. Settingthe potential of the upper electrode 806 at the high impedance Hiz(i.e., floating) transmits the electric field generated in the lowerelectrode 805. That is, a change defined as releasing the shut-offelectric field occurs. Incidentally, in this event, the electric fieldgenerated in the lower electrode 805 is transmitted to the upperelectrode 806 so that the field acts on the mirror from the entirety ofthe surface of the upper electrode 806. Therefore, the electric fieldgenerated in the lower electrode 805 can be efficiently functioned tothe mirror without being affected by the size of the lower electrode805. Furthermore, setting the potential of the upper electrode 806 at Hlevel makes it possible to transmit the electric field generated in thelower electrode 805 by amplifying the field.

That is, the changing of the potentials of the plate electrode (i.e.,the upper electrode 806) (i.e., the second electrode) through the plateline 230 (i.e., the second drive circuit) makes it possible to changethe field formed by the address electrode (i.e., the lower electrode805) (i.e., the first electrode) controlled by the memory M1 (i.e., thefirst drive circuit), thereby enabling the control of the mirror.

As described above, the action of the address electrode (i.e., the lowerelectrode 805) to the mirror 802 is controlled through the plateelectrode (i.e., the upper electrode 806), and thereby the control ofthe mirror can be attained in a shorter interval than one time-slot(i.e., the minimum interval in which the potentials of the firstelectrode are changed), in the mirror element 800.

The following are specific descriptions with reference to FIGS. 14A,14B, 14C, 14D and 14E, FIGS. 15A, 15B and 15C.

FIGS. 14A through 14E are timing charts showing an exemplary function ofthe circuit configuration exemplified in FIG. 13. FIGS. 14A through 14Eexemplify the case of adjusting a period (that is, adjusting the volumeof light), in which the mirror 802 is in the ON state, in a shorterinterval than one time-slot using a plate electrode, thereby attaining ahigh grade of gradation.

Note that FIGS. 14A through 14E exemplify the case of constituting oneframe (i.e., one screen) of each color by a plurality of subfields 250(i.e., a first subfield 251, a second subfield 252 and a third subfield253).

FIG. 14A shows that, even when an OFF-side address electrode potentialV816 and an ON-side address electrode potential V805 (i.e., thepotential of the first electrode) are changed from (L, H) to (H, L) inthe mirror element 800 that is in the ON state, the ON state (+MAX) ofthe mirror 802 is maintained for a predetermined period by setting aplate electrode potential V230 at H level.

Incidentally, the plate electrode potential V230 is always set at thehigh impedance (Hiz) when the potential is not at H level so that theoperation of the mirror is controlled by the potential of the addresselectrode.

Furthermore, the cross-hatched part of the ON-side address electrodepotential V805 shows the influence of the plate electrode potentialV230. The ON-side address electrode (i.e., the lower electrode 805) andplate electrode (i.e., the upper electrode 806) are layered together,with the insulation layer 807 intervening between them, and thereforethe two electrodes constitute a capacitor. This state can be regarded asa state in which an inter-electrode capacitor, which is constituted bythe intervention of the insulation layer 807, and the capacitor 207 c ofthe address electrode are serially connected together. Therefore, achange in the plate electrode potential V230 affects also the ON-sideaddress electrode potential V805. That is, the ON-side address electrodepotential V805 indicates a potential of the drive electrode 808 as awhole. In specific, when a voltage V1 is applied to the addresselectrode (i.e., the lower electrode 805) and a voltage V2 is applied tothe plate electrode (i.e., the upper electrode 806), a potential of avoltage V3, which is determined by the ratio of the inter-electrodecapacitor to the capacitor 207 c and which is different from thevoltages V1 and V2, is generated. Specifically, the capacitance of theinter-electrode capacitor constituted by the address electrode (i.e.,the lower electrode 805) (i.e., the first electrode) and by the plateelectrode (i.e., the upper electrode 806) (i.e., the second electrode)is smaller than the capacitance of the capacitor 207 c constituting thememory M1 that is connected to the address electrode.

The light volume obtained during the maintaining period using the plateelectrode ((i.e., the upper electrode 806) is controlled to be smallerthan the light volume obtained by an oscillation control (OSC control)in one time-slot, and also to be respectively different for the firstsubfield 251 and second subfield 252, and thereby a larger number ofsteps of gray scale can be attained.

In the respective of the first subfield 251 and second subfield 252, theperiods of the plate electrode potential V230 being controlled to be Hlevel (i.e., a predetermined potential) (that is, the maintaining periodthrough the plate electrode) are a period t21 and a period t22,respectively, (where the period t21<period t22<time slot t20). That is,the period in which the plate electrode potential V230 is controlled tobe H level (i.e., a predetermined potential) is shorter than onetime-slot.

The period t21 of the first subfield 251 is set at a period in which alight volume is a quarter (¼) of the light volume obtained in onetime-slot of an oscillation control (OSC control) (noted as “¼ OSC”hereinafter). Further, the period t22 of the second subfield 252 is setat a period for obtaining a ½ OSC. That is, in the first subfield 251,the light volume is increased by a ¼ OSC compared to the case of onlyON/OFF-controlling the address electrode (refer to (1) indicated in FIG.14A). In the second subfield 252, the light volume is increased by a ½OSC compared to the case of only ON/OFF-controlling the addresselectrode (refer to (2) indicated in FIG. 14A). Incidentally, the lightvolume obtained in one time-slot of an ON/OFF control (i.e., a PWMcontrol) is noted as “1 PWM”.

A period for setting the plate electrode potential V230 at H level isdesignated every other time slot during the ON/OFF control period. Thisconfiguration makes it possible to selectively utilize a control ofchanging over a mirror instantly to the OFF state (−MAX) withoutmaintaining it in the ON state (+MAX) using the plate electrode and acontrol of maintaining the mirror in the ON state (+MAX) using the plateelectrode. Specifically, in the last third subfield 253, a period forsetting the plate electrode potential V230 at H level is not provided.As described later, adjusting the number of time slots for maintainingthe ON period in the third subfield 253 makes it possible to correct thedifference from a desired light volume (i.e., the level of gradation),the difference attributable to providing the above described period inevery other time slot. As such, the plate electrode potential V230 isrepeatedly changed in a certain pattern.

FIG. 14B exemplifies the case of reducing the number of gray scalelevels by the light volume equivalent to ¼ OSC starting from the exampleof FIG. 14A.

If the OFF-side address electrode potential V816 and an ON-side addresselectrode potential V805 are changed over from (L, H) to (H, L) earlierby one time-slot during the ON/OFF control period of the first subfield251 shown in FIG. 14A, the light volume is reduced in the amount of 1PWM+¼ OSC in the first subfield 251 (refer to (3) indicated in FIG.14B).

Accordingly, the ON period in the third subfield 253 is extended by theequivalence of one time-slot, and the light volume is increased by theequivalence of 1 PWM (refer to (4) indicated in FIG. 14B). Thisoperation makes it possible to attain a reduced light volume by ¼ OSC inthe entirety of one frame.

FIG. 14C exemplifies the case of reducing the number of gray scalelevels by the light volume equivalent to ½ OSC starting from the exampleof FIG. 14A.

If the OFF-side address electrode potential V816 and an ON-side addresselectrode potential V805 are changed over from (L, H) to (H, L) earlierby one time-slot during the ON/OFF control period of the second subfield252 shown in FIG. 14A, the light volume is reduced in the amount of 1PWM+½ OSC in the second subfield 252 (refer to (5) indicated in FIG.14C).

Accordingly, the ON period in the third subfield 253 is extended by theequivalence of one time-slot, and the light volume is increased by theequivalence of 1 PWM (refer to (6) indicated in FIG. 14C). Thisoperation makes it possible to attain a reduced light volume by ½ OSC inthe entirety of one frame.

FIG. 14D exemplifies the case of reducing the number of gray scalelevels by the light volume equivalent to ¾ OSC starting from the exampleof FIG. 14A.

If the OFF-side address electrode potential V816 and an ON-side addresselectrode potential V805 are changed over from (L, H) to (H, L) earlierby one time-slot during the ON/OFF control period of the first subfield251 and second subfield 252 shown in FIG. 14A, the light volume isreduced in the amount of 1 PWM+¼ OSC in the first subfield 251 (refer to(7) indicated in FIG. 14D) and 1 PWM+½ OSC in the second subfield 252(refer to (8) indicated in FIG. 14D). That is, the light volume isreduced by a total of 2 PWM+¾ OSC.

Accordingly, the ON period in the third subfield 253 is extended by theequivalence of two time-slots, and the light volume is increased by theequivalence of 2 PWM (refer to (9) indicated in FIG. 14D). Thisoperation makes it possible to attain a reduced light volume by ¾ OSC inthe entirety of one frame.

FIG. 14E exemplifies the case of reducing the number of gray scalelevels by the light volume equivalent to 1 OSC starting from the exampleof FIG. 14A.

The OFF-side address electrode potential V816 and an ON-side addresselectrode potential V805 are changed over from (H, L) to (L, L) later byone time-slot during the oscillation control period of the firstsubfield 251 shown in FIG. 14A. With this operation, an oscillationstart is delayed by one time-slot and the light volume is reduced in theamount of 1 OSC in the first subfield 251 (refer to (10) indicated inFIG. 14E).

As such, the combination of light volume controls in the first subfield251 through third subfield 253 makes it possible to designate theminimum unit (i.e., the least significant bit (LSB)) of a light volumecontrol as ¼ OSC. That is, FIGS. 14B, 14C, 14D and 14E show the controlof adjusting the light volumes by 1 LSB, 2 LSB, 3 LSB and 4 LSB,respectively, as compared to the light volume of FIG. 14A.

This control makes it possible to attain a gray scale representationfour times the gray scale control by means of the ON/OFF control andoscillation control in units of time slot t20.

FIGS. 15A through 15C are timing charts showing an exemplary function ofthe circuit configuration exemplified in FIG. 13.

FIG. 15A exemplifies the case of providing a period for setting theplate electrode potential V230 at H level every other time-slot duringthe ON/OFF control period, thereby adjusting the ON period of a mirroras in the case of FIGS. 14A through 14E. Incidentally, a plate lineconnected to a plate electrode is controlled in units of ROW lines.Therefore, a control using a plate electrode actually influences othermirror elements lined up on the same ROW line. FIG. 15A depicts thestates of two mirror elements, i.e., pixel 1-1 and pixel 1-2, placed onthe same ROW line, side by side.

As exemplified in FIG. 15A, if the ON periods of the mirror elements,i.e., the pixels 1-1 and 1-2, are shifted from each other by onetime-slot, that is, if the OFF-side address electrode potential V816 aand ON-side address electrode potential V805 a (i.e., the potential ofthe first electrode) of the pixel 1-1 are changed over from (L, H) to(H, L) earlier than the OFF-side address electrode potential V816 b andON-side address electrode potential V805 b of the pixel 1-2 are changedfrom (L, H) to (H, L) by one time-slot, the adjustment of the ON periodusing the plate electrode is carried out only for one mirror element. InFIG. 15A, the adjustment of the ON period using the plate electrode iscarried out only for the mirror element shown as the pixel 1-1 withwhich the changeover from (L, H) to (H, L) and the timing of the plateelectrode potential V230 (i.e., the potential of the second electrode)turning to H level are coincident. In the other mirror element shown asthe pixel 1-2, a change in the plate electrode potential V230 affectsthe potential of the address electrode constituting a capacitor togetherwith the plate electrode, the operation of the mirror, however, is notaffected because the mirror is already maintained in the ON state.

As such, it is possible to carry out a selective adjustment using aplate electrode for individual mirror elements even for those which arelined up on the same ROW line.

FIG. 15B exemplifies the case of adjusting a period of the mirror 802being in the oscillation state using a plate electrode in a shorterperiod than one time-slot.

In FIG. 15B, the plate electrode potential V230 is set at L level whilethe OFF-side address electrode potential and ON-side address electrodepotential are maintained at (L, H) in a mirror element 800 in the ONstate, and thereby the mirror 802 is shifted to the oscillation state.Note that the plate electrode potential V230 is always set at highimpedance (Hiz) unless it is at L level.

Even though the ON-side address electrode potential is at H level, thesetting of the plate electrode potential V230 at L level shuts off theelectric field generated in the ON-side address electrode. Therefore,setting the plate electrode potential V230 at L level when the mirror isin the ON state, that is, when the potentials of the ON-side andOFF-side address electrodes are at (L, H), causes the mirror to beshifted to the oscillation state as a result of not affected by the ONside or OFF side. The use of the plate electrode as described abovemakes it possible to cause the mirror to be shifted to the oscillationstate without a need to change the potentials of an address electrode.

That is, designating a period for setting the plate line 230 at L levelto be less than one time-slot makes it possible to generate a lightvolume at less than 1 PWM and more than 1 OSC within one time-slot,thereby increasing the number of gray scale steps. Further, as shown inFIG. 15B, a plurality of time slots with different periods for settingthe plate line 230 at L level is provided within one sub-frame, andthereby the number of gray scale steps can be further increased.

In the individual time slots (A), (B), (C), (D) and (E), the period inwhich the plate electrode potential V230 is controlled at L level arerespectively, “0”, period t23, period t24, period t25 and time slot t20(where period t23<period t24<period t25<time slot t20).

Assuming the light volume of the time slot (A) is 1 PWM, the individualperiods in which the plate electrode potential V230 is controlled at Llevel are respectively designated so that the light volumes of the othertime slots (B), (C), (D) and (E) are respectively 0.8 PWM, 0.4 PWM, 0.2PWM and 0.1 PWM. Incidentally, the light volume of 0.1 PWM is equal tothat of 1 OSC in this case.

As exemplified in FIG. 15B, three steps of light volumes can be providedbetween 1 PWM and 1 OSC as the controllable light volumes within onetime-slot, by controlling the timing for changing the plate electrodepotential V230 from Hiz to L level. As a result, the combination ofthese enables the representation of a 10-time the steps of gray scale,which is translated as an increase of 4 bits in terms of the number ofgray scale steps. Further, increasing the number of timings for changingthe plate electrode potential V230 from Hiz to L level enables a furtherincrease in the number of gray scale steps.

Alternatively, the number of the above described timings may beincreased or decreased within sub-frames in line with the numbers ofgray scale steps for respective colors. For example, in the case of bluewith which the relative spectral sensitivity of human eye is low, onlythe time slots (A) and (B) may be used, and not the time slots (C), (D)and (E).

Note that the time slots of which the timing for changing the plateelectrode potential V230 from Hiz to L level are different are providedwithin one sub-frame in FIG. 15B; alternatively, these time slots may beprovided separately in different sub-frames.

Meanwhile, when the mirror is in the OFF state, that is, the potentialof the address electrode is (H, L), even if the plate electrodepotential V230 is changed to L level, the OFF state is continuouslymaintained because the electric field generated by the OFF-side addresselectrode (i.e., the drive electrode 816) is not affected.

FIG. 15C exemplifies the case of adjusting the amplitude of the mirror802 in the oscillation state using the plate electrode, therebyattaining a higher number of gray scale steps.

The operation shown in FIG. 15C sets the plate electrode potential V230(i.e., the potential of the second electrode) at H level for the periodt26 after the elapse of a certain period of time when the mirror 802 isshifted to an oscillation state by changing the OFF-side addresselectrode potential and ON-side address electrode potential (i.e., thepotential of the first electrode) from (L, H) to (L, L), thereby makingit possible to decrease the amplitude of the mirror 802 in theoscillation state. Specifically, the plate electrode potential V230 isalways set at high impedance (Hiz) unless it is at H level.

The reason is that an acceleration is generated in a direction oppositeto the proceeding direction of the mirror 802 by setting the plateelectrode potential V230 at H level when the mirror 802 is oscillatingtoward the OFF side from ON side. With this, the mirror 802 isdecelerated and is shifted to an intermediate oscillation state withsmaller amplitude. This operation makes it possible to generate a lightvolume different from that of the oscillation state with the maximumamplitude and attain a higher number of gray scale steps.

FIGS. 16A and 16B are conceptual diagrams showing exemplary circuitconfigurations of exemplary modifications of a mirror element accordingto the present embodiment.

The mirror elements exemplified in FIGS. 16A and 16B are different fromthe mirror element 800 exemplified in FIG. 13 where both of the formerhave the structure of electrode produced by layering also the OFF-sidedrive electrodes.

The mirror element 830 exemplified in FIG. 16A is configured such that,of the OFF-side drive electrode 816, a lower electrode 817 is connectedto an OFF capacitor 207 d which is also connected to a bit line 222 byway of a gate transistor 207 b that is constituted by an FET or thelike. That is, the OFF-side lower electrode 817 is configured as anaddress electrode connected to a memory cell M2 that is constituted bythe OFF capacitor 207 d and gate transistor 207 b. Meanwhile, of theOFF-side drive electrode 816, an upper electrode 818 is connected to theplate line 230 and is controlled independently from the memory cell M2.That is, the upper electrode 818 is configured as a plate electrode. Assuch, the ON-side upper electrode 806 and OFF-side upper electrode 818share the plate line 230 in the mirror element 830.

A mirror element 840 exemplified in FIG. 16B is the same as the abovedescribed mirror 830 where the lower electrode 817 of a drive electrode816 is configured as an address electrode and the upper electrode 818 isconfigured as a plate electrode. However, the mirror element 840 isdifferent from the mirror element 830 where the former is configuredsuch that the upper electrode 818 of the OFF-side drive electrode 816 isconnected to a plate line that is different from the plate line to whichthe upper electrode 806 of the ON-side drive electrode 808 is connected.That is, the mirror element 840 shown in FIG. 16 is configured toconnect the upper electrode 806 to the plate line 231 and, in contrast,connect the upper electrode 818 to the plate line 232, and therefore theindividual upper electrodes are independently controllable.

The mirror elements exemplified in FIGS. 16A and 16B are also configuredto use the plate electrode, as in the case of the above described mirrorelement 800, thereby making it possible to control the mirror in shorterperiod than one time-slot, and increasing the number of gray scale stepsas a result.

As described above, the use of the drive electrode structured bylayering the address electrode and plate electrode with the insulationlayer intervening between them enables each electrode to freely utilizethe area under the mirror. That is, a usable area is not limited inrelation with other electrodes. This configuration makes it possible toincrease a relative size of an individual electrode relative to the sizeof the mirror element and secure a sufficient magnitude of coulomb forceat each respective electrode when the mirror element is furtherminiaturized. The configuration further makes it possible to attain acomplex control using a plurality of electrodes (e.g., a control of anelectric field generated at an address electrode by means of a plateelectrode) without a need to change an access cycle to memory. In otherwords, the configuration enables a miniaturization of the apparatuswhile enhancing the definition of image and improving the gray scalerepresentation thereof.

Specifically, the present embodiment exemplifies the case of layeringthe address electrode and plate electrode together; alternatively, twoaddress electrodes may be layered together. In such a case, the twoaddress electrodes may be connected to separate pieces of memory (i.e.,first memory and second memory) and thereby multistep magnitude ofcoulomb force can be generated between the electrode and mirror. Such aconfiguration makes it possible to attain various controls of theoperation of a mirror. This configuration also enables a miniaturizationof the apparatus while enhancing the definition of image and improvingthe gray scale representation thereof.

Third Embodiment

Let it describe a mirror element according to the present preferredembodiment. FIG. 17A is a conceptual diagram showing a cross-sectionalconfiguration of a mirror element according to the present embodiment.FIG. 17B is a bottom view diagram of a drive electrode included in themirror element exemplified in FIG. 17A. FIG. 18 is a conceptual diagramshowing an exemplary circuit configuration of a mirror element 850according to the present embodiment.

The following is a description of the mirror element 850 with referenceto FIGS. 17A, 17B and 18. The mirror element 850 is configured toinclude a substrate 801, a mirror 802 placed oppositely to the substrate801, an elastic hinge 803 for supporting the mirror 802 so as to bedeflectable, a hinge electrode 804 electrically connected to the mirror802 and drive electrodes (i.e., a drive electrode 851 and a driveelectrode 816) for driving the mirror 802 to the ON side and OFF side,respectively.

In contrast to the OFF-side drive electrode 816 having the structure ofa single layer electrode, the ON-side drive electrode 851 is constitutedby a plurality of regions (i.e., parts), in which a lower electrode 805(i.e., a first electrode) and an upper electrode 806 (i.e., a secondelectrode) are layered together, with an insulation layer 807(Insulator) intervening between the two electrodes.

The difference from the mirror element 800 exemplified in FIGS. 9A, 9Band 13 are that the present mirror element 850 comprises a plateelectrode in which the lower electrode 805 of the ON-side driveelectrode (i.e., the drive electrode 851) is connected to the plate line230 and that the upper electrode 806 is an address electrode connectedto the memory cell M1. Other configurations are similar to that of theabove described mirror element 800. The following mainly describes thedifference from the mirror element 800.

Specifically, the mirror element 850 may be configured to apply a dopingprocess to a part of a protective layer (i.e., a semiconductor materiallayer) so that the part of the protective layer possesses electricconductivity.

Also the case of layering the address electrode and plate electrodeupside down as described above enables a miniaturization of theapparatus while enhancing the definition of image and improving thegradation thereof.

The following is a description of the operation of the circuitconfiguration exemplified in FIG. 18. Likewise the cases of the firstand second embodiments, the present embodiment is also configured to usea plate electrode in addition to the address electrode, thereby makingit possible to attain an ON/OFF control and oscillation control in ashorter interval than one time-slot.

Even if a plate electrode is under an address electrode, the plateelectrode and address electrode constitute a capacitor, and thereforethe potential of the address electrode increases or decreases with thepotential of the plate electrode.

With this, a mirror can be controlled with a strong electric field onlywhen the mirror is in transition, while the mirror can be retained witha low field after the transition. A fast transition enables a shortcycle time, that is, compatibility to an increased number of gray scalesteps, while the retention of the mirror with a low field is effectiveto a countermeasure to stiction. In addition, the configuration alsoenables a conventional intermediate oscillation and a high gradationalgorithm (i.e., a short-time retention of a mirror).

The following is a description of an exemplary operation of the circuitconfiguration exemplified in FIG. 18 with reference to FIGS. 19A and19B.

FIG. 19A is a timing chart showing an exemplary function of the circuitconfiguration exemplified in FIG. 18. FIG. 19A exemplifies the case ofproviding a period for setting a plate electrode potential V230 at Hlevel in every other time slot during the period of ON/OFF control,thereby adjusting the ON period of a mirror.

As exemplified in FIG. 19A, if the ON period of pixel 1-1 is shiftedfrom that of pixel 1-2 by one time-slot, that is, if the OFF-sideaddress electrode potential V816 a and ON-side address electrodepotential V806 a (i.e., the potential of the first electrode) of thepixel 1-1 are changed over from (L, H) to (H, L) earlier than theOFF-side address electrode potential V816 b and ON-side addresselectrode potential V806 b of the pixel 1-2 are changed from (L, H) to(H, L) by one time-slot, the adjustment of the ON period using the plateelectrode (i.e., the lower electrode 805) is carried out only for onemirror element. In FIG. 19A, the adjustment of the ON period using theplate electrode (i.e., the lower electrode 805) is carried out only forthe mirror element shown as the pixel 1-1 with which the changeover from(L, H) to (H, L) and the timing of the plate electrode potential V230(i.e., the potential of the second electrode) turning to H level arecoincident.

As such, it is possible to carry out a selective adjustment of the ONperiod using the plate electrode (i.e., the lower electrode 805) forindividual mirror elements that are lined up on the same ROW line. Thisconfiguration makes it possible to express a desired gray scale in highgrade for each mirror element.

Specifically, in FIG. 19A, the plate electrode potential V230 iscontrolled to be L level unless it is in H level. The reason is that theplate electrode is the lower electrode 805 and therefore the electricfield of the address electrode is not shut off even if the potential isnot set at high impedance (Hiz).

FIG. 19B is a timing chart showing an exemplary function of the circuitconfiguration exemplified in FIG. 18. FIG. 19B exemplifies the case ofproviding a period for setting the plate electrode potential V230 at Hlevel for a certain period when each time-slot of an ON/OFF controlperiod is started, thereby assisting the transition of a mirror. FIG.19B also exemplifies the case of generating an intermediate oscillationby utilizing a plate electrode potential V230.

The plate electrode (i.e., the lower electrode 805) and the addresselectrode (i.e., upper electrode 806) are layered together with theinsulation layer 807 intervening between them, and therefore a capacitoris constituted by them. Therefore, a change in the plate electrodepotential V230 affects the address electrode.

In FIG. 19B, the plate electrode potential V230 is controlled at H level(by means of Pulse-A) for a certain period when each time-slot of theON/OFF control period is started. When the mirror 802 is in the OFFstate, however, it is sufficiently attracted to the OFF-side addresselectrode (i.e., the drive electrode 816), and therefore a change (atTiming-A) in the ON-side address electrode potential V806 a caused bythe change in the plate electrode potential V230 does not influence thestate of the mirror 802. Also, when the mirror is maintained in the ONstate, it is sufficiently attracted to the ON-side address electrode(i.e., the upper electrode 806), and therefore a change (at Timing-C) inthe ON-side address electrode potential V806 a caused by the change inthe plate electrode potential V230 does not influence the state of themirror 802.

In contrast, when the mirror 802 is changed from the OFF state to ONstate, that is, when the OFF-side address electrode potential V816 a andON-side address electrode potential V806 a (i.e., the potential of thefirst electrode) of the pixel 1-1 are changed from (H, L) to (L, H), achange (at Timing-B) in the ON-side address electrode potential V806 acaused by the change in the plate electrode potential V230 (i.e., thepotential of the second electrode) assists the mirror 802 shifting fromthe OFF state to ON state. As a result, a high speed shifting of thestates of the mirror 802 is attained.

That is, the control for setting the plate electrode potential V230 at Hlevel when each time slot of the ON/OFF control period is startedeffectively functions only when the mirror is changed from the OFF stateto ON state, and therefore the control never ushers in an extraneous illinfluence at any other timing.

In the meantime, maintaining the potential of an electrode atunnecessarily high potential in order to shift the mirror 802 to the ONstate will cause a larger change in the potential when the mirror isshifted from the ON state to another state. This will contribute tostiction as already described for the first embodiment, ill affecting ahigh speed transition of the mirror.

In the case of the above described control, a high potential is set forthe electrode in order to attract the mirror at the timing (i.e.,Timing-B) of the mirror changing from the OFF state to ON state; thepotential of the electrode can be decreased to a lowest necessarypotential for maintaining the mirror at the timing (i.e., Timing-D) ofthe mirror shifting from the ON state to another state. Therefore, theabove described control is effective also to a countermeasure to thestiction. Further, a voltage applied to the address electrode can belowered, and therefore it is effective to reduce the power consumption.

Furthermore, in FIG. 19B, when the mirror 802 is shifted to anoscillation state by changing the OFF-side address electrode potentialand ON-side address electrode potential (i.e., the potential of thefirst electrode) from (L, H) to (L, L), the plate electrode potentialV230 (i.e., the potential of the second electrode) is temporarily set atH level (by means of Pulse-B) after the elapse of a certain period oftime. This operation causes a change (at Timing-E) in the ON-sideaddress electrode potential V806 a due to the change in the plateelectrode potential V230, reducing the amplitude of the mirror 802 inthe oscillation state. This principle is the same as that described forFIG. 15C showing the second embodiment. This operation makes it possibleto generate a light volume different from that generated in theoscillation state in the maximum amplitude, thereby increasing thenumber of gray scale steps.

FIGS. 20A and 20B are conceptual diagrams showing exemplary circuitconfigurations of exemplary modifications of a mirror element accordingto the present embodiment. The mirror elements exemplified in FIGS. 20Aand 20B are different from the mirror element 850 exemplified in FIG. 18where each of them comprises an electrode structure produced by layeringalso the OFF-side drive electrode.

The mirror element 860 exemplified in FIG. 20A is configured such that,of the OFF-side drive electrode 816, the upper electrode 862 isconnected to an OFF capacitor 207 d that is connected to a bit line 222by way of a gate transistor 207 b constituted by a field effecttransistor (FET) or the like. That is, the OFF-side upper electrode 862is configured as an address electrode connected to a memory cell M2 thatis constituted by OFF capacitor 207 d and gate transistor 207 b.Meanwhile, of the OFF-side drive electrode 816, the lower electrode 861is connected to a plate line 230, and is configured to be controlledindependently of the memory cell M2. That is, the lower electrode 861 isconfigured as a plate electrode. As such, the ON-side lower electrode805 and OFF-side lower electrode 861 share the plate line 230 in themirror element 860.

The mirror element 870 exemplified in FIG. 20B is the same as the mirrorelement 860 where the upper electrode 862 of the drive electrode 816 isconfigured as an address electrode and the lower electrode 861 isconfigured as a plate electrode. The mirror element 870, however, isdifferent from the mirror element 860 where the former is configuredsuch that the lower electrode 861 of the OFF-side drive electrode 816 isconnected to a plate line that is different from the plate line to whichthe lower electrode 805 of the ON-side drive electrode 808 is connected.That is, the mirror element 870 shown in FIG. 20B is configured suchthat the lower electrode 805 is connected to the plate line 231, whilethe lower electrode 861 is connected to the plate line 232, and therebythe respective lower electrodes can be independently controlled.

Likewise the case of the mirror element 850, each of the mirror elementsexemplified in FIGS. 20A and 20B uses the plate electrode, therebymaking it possible to control the mirror in a shorter period than onetime-slot and attain an increased number of gray scale steps as aresult.

Further, the equipping of the plate electrode as described above makesit possible to control a period of an oscillation state in shorterperiod than one time-slot even if the plate electrode is configured as alower electrode. That is, although it is not possible to attain anoscillation control by shutting off the electric field generated by theaddress electrode of the above described mirror element 800 exemplifiedin FIG. 15B, yet it is possible to control a mirror, which is in theoscillation state, by controlling the OFF-side plate electrode so as tochange from Hiz to H level. Therefore, a control approximately similarto the control shown in FIG. 15B can be attained, although there is thedifference between the state transition from the ON state to oscillationstate and the state transition from the oscillation state to OFF state(according to the present embodiment).

As described above, the present embodiment configured to change thelayout of the plate electrode and address electrode also makes itpossible to minimize the apparatus while enhancing the definition of animage and increasing the number of gray scale steps thereof.

Fourth Embodiment

Let it describe a mirror element according to the present embodiment.FIG. 21 is a conceptual diagram showing a cross-sectional configurationof a mirror element according to the present embodiment. FIGS. 22A, 22B,22C and 22D are top view diagram of a mirror element according to thepresent embodiment.

The mirror element 900 according to the present embodiment andexemplified in FIG. 21 is similar to the mirror element 800 shown inFIG. 9A where the ON-side drive electrode is constituted by an upperelectrode and by a lower electrode which are layered together with aninsulation layer intervening between them, whereas the mirror element900 is different from the mirror element 800 where a part of the lowerelectrode is not covered by the upper electrode in the mirror element900. The following is a description, in detail, of the mirror element900 with reference to FIG. 21 and FIGS. 22A through 22D.

The mirror element 900 is configured to include a substrate 901, amirror 902 placed oppositely to the substrate 901, an elastic hinge 903for supporting the mirror 902 so as to be deflectable, a hinge electrode904 electrically connected to the mirror 902 and a drive electrode 908for driving the mirror 902.

The drive electrode 908 is constituted by a plurality of regions (i.e.,parts) and is configured to layer together a lower electrode 905 (i.e.,a first electrode) and an upper electrode 906 (i.e., a second electrode)with an insulation layer 907 (Insulator) intervening between the twoelectrodes. In more specific, the upper electrode 906 is layered so thata part of the top surface of the insulation layer 907 covering the lowerelectrode 905 is exposed. That is, the upper electrode 906 has anopening part (i.e., a second opening part).

Specifically, FIG. 21 exemplifies only the structure on one side of theconfiguration of the mirror element 900 relative to the elastic hinge903. Although not shown in the drawing, the mirror element 900 likewiseincludes, on the opposite side relative to the elastic hinge 903, adrive electrode 918 produced by layering together a lower electrode 915and an upper electrode 916 with an insulation layer 917 interveningbetween them.

Incidentally, the mirror 902 abuts on the upper electrode (i.e., thesecond electrode) of a drive electrode (908 or 918) when the mirror 902is driven by the drive electrode and is shifted to the ON state or OFFstate. That is, the upper electrode (i.e., the second electrode)constitutes a stopper.

Individual electrodes are connected to respectively different drivecircuits so as to enable application of respectively different voltages.For example, the hinge electrode 904 is connected to the GND and thepotential is maintained at the GND potential. The lower electrodes 905and 915 are connected to the plate line 230 and the potential iscontrolled at any of 0 volts, 5 volts and high impedance (i.e., afloating). The upper electrodes 906 and 916 are connected to memory andthe potential is controlled at 0 volts or 5 volts.

The substrate 901 is equipped with a drive circuit for driving themirror 902, the drive circuit including, for example, word line 210, bitline 220, plate line 230, GND, memory, wiring, et cetera. A firstprotective layer 909 is formed on the substrate 901 and the individualelectrodes (i.e., the hinge electrode 904, lower electrode 905, andupper electrode 906) are placed on the first protective layer 909. Thedrive circuit and individual electrode are electrically connectedtogether by way of a Via equipped in the first protective layer 909.

FIG. 22A is a top view diagram of a mirror element, with upper layersthan a first protective layer 909 removed. FIG. 22B is a top viewdiagram of a mirror element in a state in which a hinge electrode and alower electrode are added to the configuration of FIG. 22A.Incidentally, FIG. 22A indicates the mirror 902, hinge electrode 904,lower electrode 905 on the ON side and lower electrode 915 on the OFFside with dotted lines. FIG. 22B indicates the mirror 902 with dottedlines.

As exemplified in FIGS. 22A and 22B, the hinge electrode 904, lowerelectrodes 905 and 915 are respectively connected to Vias 904 a, 905 aand 915 a on the bottom faces of the respective electrodes.

Furthermore, the first protective layer 909 is equipped with Via 906 aand Via 916 a at asymmetrical positions (in terms of mirror symmetry).

FIG. 22C is a top view diagram of a mirror element in a state in which asecond protective layer 910 and a barrier metal layer 911 are added ontoa hinge electrode 904 and in which an insulation layer 907 (and 917) andan upper electrode 906 (and 916) are added onto a lower electrode 905(and 915), starting from the configuration shown in FIG. 22B. Note thatthe upper electrode 906 (and 916) may be formed with a protrusionequipped in the part abutting on the mirror 902 as exemplified in FIG.12A and others.

As exemplified in FIG. 22C, the upper electrodes (i.e., the upperelectrode 906 and upper electrode 916) are layered together so that apart of each of the lower electrodes 905 and 915 (or the insulationlayers 907 and 917 on the lower electrodes) is exposed. Further, theforms and drive voltages (V2 and V3) of the upper electrodes 906 and 916may be configured to be different for the drive electrodes on the ONside and OFF side.

FIG. 22D is a top view diagram of a mirror element in a state in which athird protective layer 913 (i.e., an insulation layer) is added to theconfiguration of FIG. 22C.

As exemplified in FIG. 22D, the third protective layer 913 (i.e., theinsulation layer) is deposited so as to expose a part of the lowerelectrode in the same way as the upper electrode or so as to expose thebarrier metal layer 911 on the hinge electrode 904. That is, the thirdprotective layer 913 has an opening part (i.e., a first opening part).Meanwhile, the third protective layer 913 possesses a higher resistancevalue than the elastic hinge 903 does.

Incidentally, the materials of the individual constituent components aresimilar to those of the second embodiment. Further, the electrodes areelectrically connected to the wiring (i.e., drive circuits) by way ofVias; alternatively, they may be electrically connected by configuringsuch that a part of the protective layer possesses electricalconductivity as exemplified in FIG. 11.

Furthermore, an anti-stiction layer may be formed on the surface of themirror 902 and that of the upper electrode (i.e., the second electrode)(i.e., the stopper), although not shown in a drawing here).

FIGS. 23A and 23B are diagrams each exemplifying a state of an electricfield generated by the mirror element exemplified in FIG. 21. Note thatFIGS. 23A and 23B depict the configuration of the mirror element 900 bysimplifying it, and, further, omit the electric field in the vicinity ofthe mirror 902, of the electric field generated between the mirror 902and electrode.

FIG. 23A exemplifies the state (and the region) of an electric field E1generated when the potentials of the lower electrode 905, upperelectrode 906 and hinge electrode 904 are 5 volts, 0 volts and GNDpotential, respectively. In this case, the electric field generated bythe lower electrode 905 caused by the difference in potentials betweenitself and mirror cannot pass through the upper electrode 906 that iscontrolled at 0-volt potential. Therefore, the electric field generatedby the lower electrode 905 acts on the mirror 902 only through theopening part equipped in a part of the upper electrode 906.Consequently, the electric field E1 acted on the mirror is actually afield with the range of the field generated by the lower electrode 905narrowed down, resulting in generating weak coulomb force.

FIG. 23B exemplifies the state (and the region) of an electric field E2generated when the potentials of the lower electrode 905, upperelectrode 906 and hinge electrode 904 are 5 volts, 5 volts or floating,and GND potential, respectively.

First, when the potential of the upper electrode 906 is controlled at 5volts, the lower electrode 905 and upper electrode 906 integrally forman electric field acting on the mirror 902 since the two electrodesconstitute a capacitor, with the insulation layer intervening betweenthem. This causes an electric field E2 to be generated from the entiresurface of the drive electrode 908 (i.e., the lower electrode 905 andupper electrode 906) as exemplified in FIG. 23B and thereby strongercoulomb force is generated than in the configuration of FIG. 23A.

In contrast, when the potential of the upper electrode 906 is controlledat a floating, the upper electrode 906 does not shut off the electricfield generated by the lower electrode 905. Therefore, the fieldgenerated by the lower electrode 905 is not materially weakened so thatthe field is generated from the entirety of the drive electrode 908. Forthis reason, the coulomb force of a magnitude that is larger than thecase of the potential of the upper electrode 906 being controlled at 0volts, and the magnitude that is smaller than the case of the potentialof the upper electrode 906 being controlled at 5 volts, is acted on themirror.

Furthermore, controlling only the upper electrode 906 at 5 volts makesit possible to generate a electric field with various levels ofmagnitude, although not shown in a drawing herein.

As described above, in the configuration obtained by layering the upperelectrode 906 so as to expose a part of the lower electrode 905, thatis, in the configuration obtained by layering the upper electrode 906 ona part of the lower electrode 905, the changeover of the potentials ofeach individual electrode makes it possible to change over the range(i.e., the regions) of the electric field generated between eachrespective electrode and mirror.

Therefore, this configuration makes it possible to control the coulombforce generated in the mirror in multiple levels of magnitude without aneed to control the values of applied voltages in multiple steps,thereby attaining various controls for controlling the mirror.

The present embodiment also enables the miniaturization of the apparatuswhile enhancing the definition of an image and increasing the number ofgray scale steps thereof.

Fifth Embodiment

Let it describe a mirror element according to the present embodiment.FIG. 24A is a conceptual diagram showing a cross-sectional configurationof a mirror element according to the present embodiment. FIG. 24B is atop view diagram of the mirror element exemplified in FIG. 24A.

Incidentally, the mirror element 930 exemplified in FIG. 24A andaccording to the present fifth embodiment is similar to the mirrorelement 900 exemplified in FIG. 21 where the former is configured suchthat a drive electrode is constituted by a lower electrode (i.e., afirst electrode) and an upper electrode (i.e., a second electrode) thatare layered together with an insulation layer (i.e., a dielectric bodylayer) intervening between them and such that the upper electrode islayered so as to expose a part of the top surface of the insulationlayer covering the lower electrode. However, the mirror element 930 isconfigured to electrically connect the upper electrode to the hingeelectrode and is maintained at the GND potential, which is differentfrom the mirror element 900. Note that the upper electrode may be formedas equipping a protrusion in the part abutting on the mirror 902 asexemplified in FIG. 12A and other figures.

The following is a description of the mirror element 930 with referenceto FIGS. 24A and 24B.

The mirror element 930 is configured to include a substrate 901, amirror 902 placed oppositely to the substrate 901, an elastic hinge 903for supporting the mirror 902 so as to be deflectable, a hinge electrode904 electrically connected to the mirror 902 and a drive electrode 934for driving the mirror 902.

The drive electrode 934 is constituted by a plurality of regions (i.e.,parts) and is configured to layer together a lower electrode 931 (i.e.,a first electrode) and an upper electrode 932 (i.e., a second electrode)with an insulation layer 933 (Insulator) intervening between the twoelectrodes. In more specific, the upper electrode 932 is layered so thata part of the top surface of the insulation layer 933 covering the lowerelectrode 931 is exposed.

Specifically, FIG. 24A exemplifies the configuration of the mirrorelement 930 only for one side relative to the elastic hinge 903. Themirror element 930 is also configured similarly for the other side ofthe elastic hinge 903. Incidentally, the upper electrode 932 may beshared by the drive electrode on the left and right side thereof asexemplified in FIG. 24B. In the meantime, a photo-optical effectgenerated when an illumination light is incident to the substrate andthe like can be prevented by layering (i.e., depositing) the upperelectrode on the entirety of top surface of the substrate except for apart of top surface of the lower electrode 931 (and insulation layer933) as exemplified in FIG. 24B.

The lower electrode 931 is an address electrode and is connected tomemory by way of the Via 931 a and wiring 931 b. Further, the hingeelectrode 904 is connected to the GND by way of the Via 904 a and wiring904 b. With this, the potential of the hinge electrode 904 is maintainedat the GND potential. Specifically, the mirror 902 abuts on the upperelectrode (i.e., the second electrode) of a drive electrode when themirror 902 is driven by the drive electrode and shifted to the ON stateor OFF state. That is, the upper electrode (i.e., the second electrode)also constitutes a stopper.

The upper electrode 932 is connected to the lower electrode 931 by wayof the insulation layer 933, and, in contrast, is directly connected tothe hinge electrode 904. That is, the upper electrode 932 is connectedto the GND (i.e., a drive circuit) by way of the hinge electrode 932,Via 904 a and wiring 904 b. This causes the potential of the upperelectrode 932 to be maintained at the GND potential that is the same asthe potential of the hinge electrode 904. Note that the hinge electrode904 and upper electrode 932 may be made of respectively differentmaterials or those containing different additives.

As described above, the mirror element 930 according to the presentembodiment is configured to layer (i.e., deposit) the upper electrode932 on a part of the lower electrode 931 and also to electricallyconnect the upper electrode 932 to the hinge electrode 904. Such aconfiguration causes the electric field generated by the lower electrode931 to act on the mirror 902 from the opening part, in which the upperelectrode 932 is not layered, while maintaining the upper electrode 932,on which the mirror 902 abuts, at the GND potential, thereby controllingthe mirror 902.

Because the potential of the upper electrode 932 on which the mirror 902abuts is maintained at constant, the potential of the abutted-onelectrode (e.g., the upper electrode 932) does not change while themirror is shifting from the ON state or OFF state. Therefore, a stictionphenomenon caused by a steep change of the potentials of an abutted-onelectrode can be prevented, and a highly responsive, high speedoperation of the mirror can be attained.

Although not shown in a drawing herein, an anti-stiction layer mayfurther be formed on a surface of the mirror element and a surface ofthe upper electrode 932 (i.e., the second electrode) (i.e., thestopper). More specifically, an insulation layer may be formed betweenthe mirror 902 and upper electrode 932 (i.e., the second electrode). Theinsulation layer possesses a higher resistance value than at least theresistance of the elastic hinge 903 does.

Note that it is certainly possible to obtain a similar effect by notconnecting the upper electrode, which is maintained at the GNDpotential, to the hinge electrode. In such a case, however, a Via and awiring need to be provided separately from the hinge electrode.

Meanwhile, the lower electrode 931 may be constituted by layeringtogether an address electrode and a plate electrode with an insulationlayer intervening between them. That is, the drive electrode 934 may bestructured by layering three electrodes together. This configurationmakes it possible to control the mirror in various manners using theaddress electrode and plate electrode while preventing stiction andmaintaining a highly responsive, high speed operation of the mirror.

As described above, also the present embodiment enables theminiaturization of the apparatus while enhancing the definition of animage and increasing the number of gray scale steps thereof

Sixth Embodiment

Let it describe a mirror element according to the present sixthembodiment. FIG. 25 is a conceptual diagram showing a cross-sectionalconfiguration of a mirror element according to the present embodiment.The following is a description of the mirror element 940, in detail,with reference to FIG. 25.

The mirror element 940 is configured to include a substrate 901, amirror 902 placed oppositely to the substrate 901, an elastic hinge 903for supporting the mirror 902 so as to be deflectable, a hinge electrode904 electrically connected to the mirror 902 and a drive electrode 941for driving the mirror 902.

A first protective layer 909 is formed on the substrate 901 andindividual electrodes (i.e., the hinge electrode 904 and drive electrode941) are placed on the first protective layer 909. Further, a secondprotective layer 942 is formed on the surfaces of the hinge electrode904 and drive electrode 941. The material of the first protective layer909 and second protective layer 942 is desired to be a material such assilicon and silicon carbide (SiC).

The drive circuit and each electrode are electrically connected togetherby way of a doping region equipped in the first protective layer 909. Inspecific, the hinge electrode 904 is electrically connected to a wiring904 b by way of a doping region 944. More specifically, the driveelectrode 941 is electrically connected to a wiring 941 b by way of adoping region 945.

Furthermore, the wiring 904 b is connected to the GND of the drivecircuit. Therefore, the potential of the hinge electrode 904 ismaintained at the GND potential. On the other hand, the wiring 941 b isconnected to memory M1 constituted by a gate transistor 207 a and by acapacitor 207 c. Therefore, the drive electrode 941 is an addresselectrode, and is controlled in accordance with the presence or absenceof data written to the memory M1 through a word line 210 and a bit line220 (i.e., a first bit line 221), that is, controlled by the charging ordischarging of electric charge to and from the capacitor 207 c.

Further, the hinge electrode 904 and elastic hinge 903 are electricallyconnected together by means of a doping region 943 equipped in thesecond protective layer 942. With this configuration, the mirror 902 ismaintained at the same potential as that of the hinge electrode 904 anddoping region 943.

Incidentally, the doping regions 943, 944 and 945 are formed in themethod described above for the second embodiment.

Furthermore, the hinge electrode 904 is formed higher than the driveelectrode 941 as exemplified in FIG. 25. This configuration causes themirror 902 to abut on the second protective layer 942 formed on thehinge electrode 904 when the mirror 902 is driven by a drive electrodeand shifted to the ON state or OFF state. The doping region 943 equippedin the second protective layer 942 is formed on the entire top surfaceof the hinge electrode 904 and therefore, strictly noting, the mirror902 actually abuts on the doping region 943 of the second protectivelayer 942.

Although not shown in a drawing here, an anti-stiction layer may furtherbe formed on the respective surfaces of the mirror 902 and hingeelectrode 904. Further, an insulation layer may be formed between themirror 902 and hinge electrode 904. The insulation layer possesses ahigher resistance value than at least the elastic hinge 903 does. Thisconfiguration causes the mirror 902 to abut on the hinge electrode 904with the insulation layer intervening between them.

As described above, in the mirror element according to the presentembodiment, the hinge electrode 904 and second protective layer 942function as stoppers. The doping region 943 of the second protectivelayer 942 on which the mirror 902 abuts is electrically connected to thehinge electrode 904 and thereby the potential is maintained at constant.Therefore, the potential of the abutted-on region (i.e., the dopingregion 943) is not changed while the mirror 902 is shifting from the ONstate or OFF state. As a result, a stiction phenomenon can be preventedas in the case of the fifth embodiment and a highly responsive, highspeed operation of the mirror is attained.

Further, the hinge electrode 904 is positioned closer to the deflectingcenter of the mirror 902 than the drive electrode is. Therefore, even ifa force functioning as retaining the mirror is generated, contradictingthe control, due to stiction, yet its moment is small, and therefore theinfluence of the stiction can be suppressed to relative small.

Specifically, here, the drive electrode 941 is configured as a singleelectrode; alternatively, a layered drive electrode may be used as inthe case of other embodiments. This configuration makes it possible toattain various controls of a mirror using the plate electrode andaddress electrode under an environment with a small influence ofstiction.

Furthermore, a similar effect can be obtained by configuring the dopingregion 943 using a barrier metal.

As described above, also the present embodiment enables theminiaturization of the apparatus while enhancing the definition of animage and increasing the number of gray scale steps thereof.

Note that the present invention comprehends the following contents ofdisclosure:

Embodiment 1

An image projection system implemented with a micro-electromechanicalsystem (MEMS) device supported on a substrate functioning a spatiallight modulator (SLM), wherein the MEMS further comprising:

a drive circuit disposed on the substrate;

a deflectable hinge extended from the substrate for supporting a movableelectrode disposed above the substrate;

an elastic hinge for supporting the movable electrode;

a stationary electrode disposed on the substrate and is connected to thedrive circuit,

wherein the stationary electrode comprises a first electrode, a secondelectrode and an insulation layer, wherein the first electrode andsecond electrode are layered with the insulation layer interveningbetween the two electrodes.

Additional Embodiment 2

The MEMS device according to the additional embodiment 1, wherein thestationary electrode further comprises a protective layer on the surfaceof the stationary electrode.

Additional Embodiment 3

The MEMS device according to the additional embodiment 1, wherein thefirst electrode and second electrode are respectively connected to thedrive circuits which are different from each other.

Additional Embodiment 4

The MEMS device according to the additional embodiment 1, wherein thedrive circuit comprises memory, wherein at least either of the first andsecond electrodes is connected to the memory.

Additional Embodiment 5

The MEMS device according to the additional embodiment 1, wherein atleast either of the first electrode and second electrode is connected tothe ground (GND) of the drive circuit.

Additional Embodiment 6

The MEMS device according to the additional embodiment 1, wherein theinsulation layer is made of a material containing silicon (Si).

Additional Embodiment 7

The MEMS device according to the additional embodiment 1, wherein theelastic hinge is made of a material containing silicon (Si), thematerial to which a doping is applied with the group III or V material.

Additional Embodiment 8

The MEMS device according to the additional embodiment 1, wherein atleast either of the first electrode and second electrode is a hingeelectrode electrically connected to the movable electrode and elastichinge.

Additional Embodiment 9

The MEMS device according to the additional embodiment 2, wherein theprotective layer comprises an opening part.

Additional Embodiment 10

The MEMS device according to the additional embodiment 2, wherein theelectrical resistance of the protective layer is higher than that of theelastic hinge.

Additional Embodiment 11

The MEMS device according to the additional embodiment 2, wherein theprotective layer is further covered with a stiction protection layer.

Additional Embodiment 12

The MEMS device according to the additional embodiment 2, wherein theprotective layer is made of a material containing silicon (Si).

Additional Embodiment 13

A micro-electromechanical system (MEMS) device, comprising:

a substrate comprising a drive circuit;

a movable electrode placed oppositely to the substrate;

an elastic hinge for supporting the movable electrode;

a stationary electrode which is connected to the drive circuit andcomprising a first electrode and a second electrode for driving themovable electrode, wherein the first electrode causes the movableelectrode to be generated in the movable electrode with the interventionof the second electrode.

Additional Embodiment 14

The MEMS device according to the additional embodiment 13, wherein atleast a part of the first electrode is layered and so is at least a partof the second electrode.

Additional Embodiment 15

The MEMS device according to the additional embodiment 13, comprising aninsulation layer between the first electrode and second electrode.

Additional Embodiment 16

The MEMS device according to the additional embodiment 13, whereineither of the first electrode and second electrode is controlled to beelectrically floating.

Additional Embodiment 17

The MEMS device according to the additional embodiment 13, wherein thefirst electrode and second electrode are connected to the drive circuitswhich are different from each other.

Additional Embodiment 18

The MEMS device according to the additional embodiment 13, wherein thedrive circuit comprises memory, wherein at least either of the first andsecond electrodes is connected to the memory.

Additional Embodiment 19

A mirror device, comprising:

a substrate comprising a drive circuit;

a plurality of mirrors placed oppositely to the substrate; and

a plurality of drive electrodes, each of which corresponds to the mirrorand which drives it, wherein each of the plurality of drive electrodesis constituted by at least two parts, that is, a mirror-side electrodeunit placed on the mirror side and a substrate-side electrode unitplaced on the substrate side, wherein the mirror-side electrode unit andsubstrate-side electrode unit are respectively connected to the drivecircuits which are different from each other.

Additional Embodiment 20

The mirror device according to the additional embodiment 19, wherein atleast a part of the mirror-side electrode unit is layered and so is atleast a part of the substrate-side electrode unit.

Additional Embodiment 21

The mirror device according to the additional embodiment 19, comprisinga dielectric body layer between the mirror-side electrode unit andsubstrate-side electrode unit.

Additional Embodiment 22

The mirror device according to the additional embodiment 19, wherein thedrive circuit to which the mirror-side electrode unit is connectedcomprises a piece of different memory for each of the drive electrodes,wherein the mirror-side electrode unit is connected to the memory whichis corresponding the mirror-side electrode unit, wherein thesubstrate-side electrode unit is connected to the drive circuit which iscommonly connected through a plurality of the drive electrodes.

Additional Embodiment 23

The mirror device according to the additional embodiment 19, wherein thedrive circuit comprises first memory and second memory, wherein themirror-side electrode unit is connected to the first memory, and thesubstrate-side electrode unit is connected to the second memory.

Additional Embodiment 24

The mirror device according to the additional embodiment 19, wherein thedrive circuit comprises a capacitor, wherein at least either of themirror-side electrode unit and substrate-side electrode unit isconnected to the capacitor.

Additional Embodiment 25

A micro-electromechanical system (MEMS) device, comprising:

a substrate comprising a wiring layer of a drive circuit;

an upper electrode placed on the substrate;

a Via layer in which a Via connecting the wiring layer to the upperelectrode is placed; and

a lower electrode placed adjacently to the upper electrode, wherein

the lower electrode is formed in the Via layer, and

an insulation layer is comprised between the upper electrode and lowerelectrode.

Additional Embodiment 26

The MEMS device according to the additional embodiment 25, wherein thematerial of the lower electrode is the same as that of the Via.

Additional Embodiment 27

The MEMS device according to the additional embodiment 25, wherein thematerial or additive of the upper electrode is different from thematerial or additive of the lower electrode.

Additional Embodiment 28

A mirror device, comprising:

a substrate comprising a drive circuit;

a mirror placed oppositely to the substrate;

a hinge electrode electrically connected to the mirror; and

a drive electrode which is constituted by a plurality of regions andwhich drives the mirror, wherein

the hinge electrode is connected to at least one of the regions of thedrive electrode.

Additional Embodiment 29

The mirror device according to the additional embodiment 28, wherein themirror abuts on the region connected to the hinge electrode.

Additional Embodiment 30

The mirror device according to the additional embodiment 28, wherein theregion connected to the hinge electrode is controlled at the samepotential as that of the hinge electrode.

Additional Embodiment 31

The mirror device according to the additional embodiment 28, wherein theregion connected to the hinge electrode is maintained at a constantpotential.

Additional Embodiment 32

The mirror device according to the additional embodiment 28, wherein thehinge electrode is connected to the ground (GND).

Additional Embodiment 33

The mirror device according to the additional embodiment 28, wherein thedrive electrode includes an insulation layer between the plurality ofregions.

Additional Embodiment 34

The mirror device according to the additional embodiment 29, wherein theregion on which the mirror is abutted is further covered with aprotective layer.

Additional Embodiment 35

The mirror device according to the additional embodiment 29, wherein theregion on which the mirror is abutted is further covered with ananti-stiction layer.

Additional Embodiment 36

A mirror device, comprising:

a substrate;

a mirror placed oppositely to the substrate;

a hinge for supporting the mirror so as to be deflectable; and

a drive electrode which is placed on the substrate and which drives themirror, wherein

the drive electrode comprises an insulation layer, and a first electrodeand a second electrode which are layered with the insulation layerintervening between the two electrodes, wherein

the first electrode is connected to memory, and

the second electrode is connected to a plate line.

Additional Embodiment 37

The mirror device according to the additional embodiment 36, wherein aplurality of the second electrodes used for controlling the mirrorswhich are respectively different is connected commonly to the plateline.

Additional Embodiment 38

The mirror device according to the additional embodiment 36, wherein thefirst electrode and second electrode constitute a capacitor betweenthemselves.

Additional Embodiment 39

The mirror device according to the additional embodiment 38, wherein thecapacitance of the capacitor is smaller than that of a capacitorconstituting the memory.

Additional Embodiment 40

A mirror device, comprising:

a substrate comprising a first drive circuit and a second drive circuit;

a mirror placed oppositely to the substrate;

a hinge for supporting the mirror so as to be deflectable; and

a drive electrode which is placed on the substrate and which drives themirror, wherein

the drive electrode comprises an insulation layer, and a first electrodeand a second electrode which are layered with the insulation layerintervening between the two electrodes, wherein

the first drive circuit causes the potential of the first electrode tobe changed to a plurality of predetermined potentials including at leastH level and L level, and

the second drive circuit causes the potential of the second electrode tobe changed to high impedance and predetermined potentials including atleast H level and L level repeatedly in a predetermined pattern.

Additional Embodiment 41

The mirror device according to the additional embodiment 40, wherein oneof the predetermined potentials of the second drive circuit is the sameas the potential of the mirror.

Additional Embodiment 42

The mirror device according to the additional embodiment 40, wherein aperiod in which the potential of the second electrode is at thepredetermined potentials of the second drive circuit is shorter than aminimum period in which the potentials of the first electrode change.

Additional Embodiment 43

The mirror device according to the additional embodiment 40, wherein thesecond drive circuit changes the potentials of the second electrode tothe H level at or after a predefined period of time has elapsed sincethe potentials of the first electrode changed from the H level to Llevel.

Additional Embodiment 44

The mirror device according to the additional embodiment 40, wherein thesecond drive circuit changes the potentials of the second electrode tothe H level synchronously with a timing at which the potentials of thefirst electrode changes from the L level to H level.

Additional Embodiment 45

The mirror device according to the additional embodiment 40, wherein thesecond drive circuit changes the potentials of the second electrode tothe H level for a certain period of time after the potentials of thefirst electrode change from the H level to L level.

Additional Embodiment 46

A mirror device, comprising:

a substrate comprising a first drive circuit and a second drive circuit;

a mirror placed oppositely to the substrate;

a hinge for supporting the mirror so as to be deflectable; and

a drive electrode which is placed on the substrate and which drives themirror, wherein

the drive electrode comprises an insulation layer, and a first electrodeand a second electrode which are layered with the insulation layerintervening between the two electrodes, wherein

an electric fields formed by the first electrode controlled by the firstdrive circuit are changed by changing the potentials of the secondelectrode using the second drive circuit, and thereby the mirror iscontrolled.

Additional Embodiment 47

The mirror device according to the additional embodiment 46, wherein thesecond drive circuit changes over the potentials of the second electrodebetween high impedance and a predetermined potential, thereby changingthe electric fields.

Additional Embodiment 48

The mirror device according to the additional embodiment 46, wherein achange in the electric field is the shutting-off of the electric fieldor the releasing of the shutoff thereof.

Additional Embodiment 49

The mirror device according to the additional embodiment 46, wherein achange in the electric field is a change in the region of the electricfield.

Additional Embodiment 50

The mirror device according to the additional embodiment 46, wherein achange in the electric field occurs in accordance with the deflectionstate of the mirror.

Additional Embodiment 51

The mirror device according to the additional embodiment 48, whereinshutting off the electric field causes the mirror which is a stationaryto start oscillating.

Additional Embodiment 52

The mirror device according to the additional embodiment 48, whereinreleasing the shutting-off of the electric field causes the amplitude ofthe mirror, which is oscillating, to be reduced.

Additional Embodiment 53

The mirror device according to the additional embodiment 49, wherein achange in the region of the electric field does not affect thedeflection state of the mirror which is stationary.

1. An image display system implemented with a spatial light modulator(SLM) having a plurality of pixel elements wherein each of the pixelelements comprising: an electrode having a structure body includes afirst electrically conductive layer and a second electrically conductivelayer; the structure body further includes a semiconductor layerdisposed adjacently to the first electric conductive layer and secondelectric conductive layer wherein the semiconductor layer furthercomprising a doped conductive area for electrically connecting the firstelectric conductive layer and second electric conductive layer; and atleast one of the first and second conductive layer is a metal layercovered by the semiconductor layer.
 2. The image display systemaccording to claim 1, wherein: the doped conductive area of thesemiconductor layer further having a dopant concentration equal to orgreater than 10¹⁶/cm³.
 3. The image display system according to claim 1,wherein: the doped conductive area of the semiconductor layer furtherhaving a resistance equal to or less than 1 giga-ohms.
 4. The imagedisplay system according to claim 1, wherein: the semiconductor layerfurther comprises an annealed semiconductor layer annealed by applyingan annealing temperature below an aluminum melting temperature.
 5. Theimage display system according to claim 1 wherein: the semiconductorlayer further comprises an annealed semiconductor layer annealed byapplying an annealing temperature between 400° C. and 450° C.
 6. Theimage display system according to claim 1, wherein: the doped conductivearea of the semiconductor layer further having a same or greater areathan a contact area between said semiconductor layer and said first andsecond electrical conductive layers.
 7. The image display systemaccording to claim 1, wherein: the first electric conductive layerfurther comprises a movable body and said first and second conductivelayers are controlled by a voltage applied to the semiconductor layer.8. The image display system according to claim 7, further comprising: adrive electrode for applying a voltage for driving the movable body. 9.The image display system according to claim 7, wherein: the movable bodycomprises a reflection surface for reflecting electromagnetic wavesprojected thereon.
 10. The image display system according to claim 9,wherein: the reflection surface comprises an optimized reflectionsurface for reflecting a visible light.
 11. The image display systemaccording to claim 1 wherein: the plurality of pixel elements areconfigured as a pixel array.
 12. The image display system according toclaim 1, wherein: each of the pixel elements further comprising adeflectable mirror and the electrode further comprises a drive electrodefor applying a voltage to control the micromirror.
 13. An image displaysystem implemented with a spatial light modulator (SLM) having aplurality of pixel elements wherein each of the pixel elementscomprising: an electrode having a structure body includes a firstelectrically conductive layer and a second electrically conductivelayer; the structure body further includes a semiconductor layerdisposed adjacently to the first electric conductive layer and secondelectric conductive layer wherein the semiconductor layer furthercomprising a doped conductive area for electrically connecting the firstelectric conductive layer and second electric conductive layer; and atleast one of the first electric conductive layer and second electricconductive layer is composed with a material containing aluminum, andthe semiconductor layer further comprises an annealed semiconductorlayer annealed by using a gas containing hydrogen.
 14. An image displaysystem implemented with a spatial light modulator (SLM) having aplurality of pixel elements wherein each of the pixel elementscomprising: an electrode having a structure body includes a firstelectrically conductive layer and a second electrically conductivelayer; the structure body further includes a semiconductor layerdisposed adjacently to the first electric conductive layer and secondelectric conductive layer wherein the semiconductor layer furthercomprising a doped conductive area for electrically connecting the firstelectric conductive layer and second electric conductive layer; and thedoped conductive area of the semiconductor layer further comprisesmultiple sub-doped conductive areas on said semiconductor layer.
 15. Animage display system implemented with a spatial light modulator (SLM)having a plurality of pixel elements wherein each of the pixel elementscomprising: an electrode having a structure body includes a firstelectrically conductive layer and a second electrically conductivelayer; the structure body further includes a semiconductor layerdisposed adjacently to the first electric conductive layer and secondelectric conductive layer wherein the semiconductor layer furthercomprising a doped conductive area for electrically connecting the firstelectric conductive layer and second electric conductive layer; anelectric conductive movable body, and a second semiconductor layerdisposed adjacently to the first electric conductive layer and theconductive movable body and the second semiconductor layer furthercomprises a second doped conductive area for electrically connecting thefirst electric conductive layer and the conductive movable body.
 16. Theimage display system according to claim 15, wherein: the semiconductorlayer, the first electrically conductive layer and the secondsemiconductor layer are applied a voltage to control the movable bodyand the second electric conductive layer.
 17. The image display systemaccording to claim 15, further comprising: a drive electrode forapplying a voltage for driving the conductive movable body.
 18. Theimage display system according to claim 15, wherein: the conductivemovable body comprises a reflection surface for reflectingelectromagnetic waves projected thereon.
 19. The image display systemaccording to claim 18, wherein: the reflection surface comprises anoptimized reflection surface for reflecting a visible light.
 20. Theimage display system according to claim 15, comprising: the plurality ofpixel elements are configured as a pixel array.
 21. The image displaysystem according to claim 15, wherein: the second semiconductor layerand the semiconductor material layer are composed of a samesemiconductor material.
 22. An image display system implemented with amirror device comprising: a plurality of micromirrors each supported ona deflectable hinge electrically connected to the micromirror; a hingeelectrode for applying a voltage to the hinge and the micromirrorelectrically connected to the hinge; a drive electrode for applying asecond voltage independent from the voltage applied to of the hingeelectrode; a drive circuit for controlling the hinge electrode and thedrive electrode; and a semiconductor layer comprising a doped conductivearea for electrically connecting the hinge and hinge electrode, hingeelectrode and drive circuit, or the drive electrode and drive circuit.